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International Journal of Electrical Components and Energy Conversion

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2024, Volume 10
1. Issue 1, Dec.
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Volume 6, Issue 1, June 2020

Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs

Alireza Dehghan

Issue: Volume 6, Issue 1, June 2020

Pages: 1-6

Received: 12 August 2020

Accepted: 26 August 2020

Published: 7 September 2020

DOI: 10.11648/j.ijecec.20200601.11

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Abstract: In deep sub-micron technologies, conventional silicon-based transistors are faced main several problems related to the short-channel effects such as power dissipation, subthreshold leakage, and drain-induced barrier lowering (DIBL). Graphene nano-ribbon field-effect transistors (GNRFETs) have become a potential contender as a substitute for traditi... Show More

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