Abstract: SOI-Multi-FinFET was analyzed by a three-dimensional numerical device simulator and its electrical characteristics and potential distribution in the oxide and the silicon in the section perpendicular to the flow of the current were compared for single-fin, three-fin and five-fin FET to investigate the influence of fins number on corner effect in Dual-gate SOI Multi-FinFET, and we provide a comparison with a Tri-gate SOI Multi-FinFET structure.Abstract: SOI-Multi-FinFET was analyzed by a three-dimensional numerical device simulator and its electrical characteristics and potential distribution in the oxide and the silicon in the section perpendicular to the flow of the current were compared for single-fin, three-fin and five-fin FET to investigate the influence of fins number on corner effect in Du...Show More
