The features of an over-voltage high-current nanosecond discharge in argon of high pressure (р=202 kPa) ignited between the electrodes of CuInSe2 compound are presented. In the sputtering of massive chalcopyrite electrodes, the CuInSe2 pair gets into the discharge plasma. Main products of dissociation of chalcopyrite molecules in the over-voltage nanosecond discharge are established. They were in excited and ionized states and in the spectra of plasma radiation they were predominantly represented by atoms and single charged ions of copper and indium. It is proposed to use the spectral lines of copper and indium to control the process of thin films of chalcopyrite deposition in a real time. Using gas-discharge method thin films of chalcopyrite are synthesized on quartz substrates. These films effectively absorb the radiation falling on their surface in the spectral range of 200-800 nm. This property opens the prospects for their application in photovoltaic devices.
| Published in | Journal of Biomaterials (Volume 3, Issue 2) |
| DOI | 10.11648/j.jb.20190302.11 |
| Page(s) | 37-41 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2019. Published by Science Publishing Group |
Chalcopyrite Electrodes, Over-voltage High-Current Discharge, Excited and Ionized States, Thin Films
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APA Style
Shuiabov Oleksander, Mynya Oleksander, Chyhin Vasyl, Grytsak Roksolana, Malinina Antonina. (2019). Features of High Current Nanosecond Discharge in Mixture of High Pressure CuInSe2 Chalkopyrite Vapor and Argon. Journal of Biomaterials, 3(2), 37-41. https://doi.org/10.11648/j.jb.20190302.11
ACS Style
Shuiabov Oleksander; Mynya Oleksander; Chyhin Vasyl; Grytsak Roksolana; Malinina Antonina. Features of High Current Nanosecond Discharge in Mixture of High Pressure CuInSe2 Chalkopyrite Vapor and Argon. J. Biomater. 2019, 3(2), 37-41. doi: 10.11648/j.jb.20190302.11
AMA Style
Shuiabov Oleksander, Mynya Oleksander, Chyhin Vasyl, Grytsak Roksolana, Malinina Antonina. Features of High Current Nanosecond Discharge in Mixture of High Pressure CuInSe2 Chalkopyrite Vapor and Argon. J Biomater. 2019;3(2):37-41. doi: 10.11648/j.jb.20190302.11
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Download@article{10.11648/j.jb.20190302.11,
author = {Shuiabov Oleksander and Mynya Oleksander and Chyhin Vasyl and Grytsak Roksolana and Malinina Antonina},
title = {Features of High Current Nanosecond Discharge in Mixture of High Pressure CuInSe2 Chalkopyrite Vapor and Argon},
journal = {Journal of Biomaterials},
volume = {3},
number = {2},
pages = {37-41},
doi = {10.11648/j.jb.20190302.11},
url = {https://doi.org/10.11648/j.jb.20190302.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jb.20190302.11},
abstract = {The features of an over-voltage high-current nanosecond discharge in argon of high pressure (р=202 kPa) ignited between the electrodes of CuInSe2 compound are presented. In the sputtering of massive chalcopyrite electrodes, the CuInSe2 pair gets into the discharge plasma. Main products of dissociation of chalcopyrite molecules in the over-voltage nanosecond discharge are established. They were in excited and ionized states and in the spectra of plasma radiation they were predominantly represented by atoms and single charged ions of copper and indium. It is proposed to use the spectral lines of copper and indium to control the process of thin films of chalcopyrite deposition in a real time. Using gas-discharge method thin films of chalcopyrite are synthesized on quartz substrates. These films effectively absorb the radiation falling on their surface in the spectral range of 200-800 nm. This property opens the prospects for their application in photovoltaic devices.},
year = {2019}
}
TY - JOUR T1 - Features of High Current Nanosecond Discharge in Mixture of High Pressure CuInSe2 Chalkopyrite Vapor and Argon AU - Shuiabov Oleksander AU - Mynya Oleksander AU - Chyhin Vasyl AU - Grytsak Roksolana AU - Malinina Antonina Y1 - 2019/12/17 PY - 2019 N1 - https://doi.org/10.11648/j.jb.20190302.11 DO - 10.11648/j.jb.20190302.11 T2 - Journal of Biomaterials JF - Journal of Biomaterials JO - Journal of Biomaterials SP - 37 EP - 41 PB - Science Publishing Group SN - 2640-2629 UR - https://doi.org/10.11648/j.jb.20190302.11 AB - The features of an over-voltage high-current nanosecond discharge in argon of high pressure (р=202 kPa) ignited between the electrodes of CuInSe2 compound are presented. In the sputtering of massive chalcopyrite electrodes, the CuInSe2 pair gets into the discharge plasma. Main products of dissociation of chalcopyrite molecules in the over-voltage nanosecond discharge are established. They were in excited and ionized states and in the spectra of plasma radiation they were predominantly represented by atoms and single charged ions of copper and indium. It is proposed to use the spectral lines of copper and indium to control the process of thin films of chalcopyrite deposition in a real time. Using gas-discharge method thin films of chalcopyrite are synthesized on quartz substrates. These films effectively absorb the radiation falling on their surface in the spectral range of 200-800 nm. This property opens the prospects for their application in photovoltaic devices. VL - 3 IS - 2 ER -
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