Importance of renewable energy cannot be over emphasized. Titanium IV oxide (TiO2) is the most suitable semiconductor for dye sensitized solar cell (DSSC) due to its chemical stability, non toxicity and excellent optoelectronic properties. In this research TiO2 is coated on graphene to enhance its charge transport aiming to reduce recombination which is a main set back in DSSCs. undestanding graphene- TiO2 contact is therefore essential for DSSC application. TiO2 thin films were deposited on single layer graphene (SLG) as well as on flourine tin oxide (FTO) using doctor blading technique. The films were annealed at rates of 2°C /min and 1°C/min up to a temperature of 450°C followed by sintering at this temperature for 30 minutes. Four point probe SRM-232 was used to measure sheet resistance of the samples. The film thickness were obtained from transmittance using pointwise unconstrained minimization approximation (PUMA). UV –VIS spectrophotometer was employed to measure transmittance. Resistivity of TiO2 on both FTO and Graphene were of order 10-4 Ωcm. However, TiO2 annealed on graphene matrix exhibited a slightly lower resistivity 5.6 x10-4 Ωcm as compared to 6.0x10-4 Ωcm on FTO. Optical transmittance on visible region was lower for TiO2 on FTO than on SLG, 71.48% and 80.11% respectively. Urbach energy (Eu) for weak absorption region decreased with annealing rate. Urbach energies for 1°C/min TiO2 on FTO and SLG were 361 meV and 261meV respectively. This was used to account for decrease of disoders of films due to annealing. A striking relation between sheet resistivity and urbach was reported suggesting SLG as a suitable candidate for photoanode of a DSSC.
| Published in | Journal of Photonic Materials and Technology (Volume 10, Issue 1) |
| DOI | 10.11648/j.jmpt.20241001.12 |
| Page(s) | 7-12 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2024. Published by Science Publishing Group |
Graphene, Urbach Energy, Resistivity, Annealing, Titanium IV Oxide
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APA Style
Riungu, G. G., Mugo, S. W., Ngaruyia, J. M., Gitu, L. (2024). Influence of Graphene on Sheet Resistivity and Urbach Enery of Nano TiO2 for DSSC Electrode. Journal of Photonic Materials and Technology, 10(1), 7-12. https://doi.org/10.11648/j.jmpt.20241001.12
ACS Style
Riungu, G. G.; Mugo, S. W.; Ngaruyia, J. M.; Gitu, L. Influence of Graphene on Sheet Resistivity and Urbach Enery of Nano TiO2 for DSSC Electrode. J. Photonic Mater. Technol. 2024, 10(1), 7-12. doi: 10.11648/j.jmpt.20241001.12
AMA Style
Riungu GG, Mugo SW, Ngaruyia JM, Gitu L. Influence of Graphene on Sheet Resistivity and Urbach Enery of Nano TiO2 for DSSC Electrode. J Photonic Mater Technol. 2024;10(1):7-12. doi: 10.11648/j.jmpt.20241001.12
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Download@article{10.11648/j.jmpt.20241001.12,
author = {Geoffrey Gitonga Riungu and Simon Waweru Mugo and James Mbiyu Ngaruyia and Leonard Gitu},
title = {Influence of Graphene on Sheet Resistivity and Urbach Enery of Nano TiO2 for DSSC Electrode
},
journal = {Journal of Photonic Materials and Technology},
volume = {10},
number = {1},
pages = {7-12},
doi = {10.11648/j.jmpt.20241001.12},
url = {https://doi.org/10.11648/j.jmpt.20241001.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jmpt.20241001.12},
abstract = {Importance of renewable energy cannot be over emphasized. Titanium IV oxide (TiO2) is the most suitable semiconductor for dye sensitized solar cell (DSSC) due to its chemical stability, non toxicity and excellent optoelectronic properties. In this research TiO2 is coated on graphene to enhance its charge transport aiming to reduce recombination which is a main set back in DSSCs. undestanding graphene- TiO2 contact is therefore essential for DSSC application. TiO2 thin films were deposited on single layer graphene (SLG) as well as on flourine tin oxide (FTO) using doctor blading technique. The films were annealed at rates of 2°C /min and 1°C/min up to a temperature of 450°C followed by sintering at this temperature for 30 minutes. Four point probe SRM-232 was used to measure sheet resistance of the samples. The film thickness were obtained from transmittance using pointwise unconstrained minimization approximation (PUMA). UV –VIS spectrophotometer was employed to measure transmittance. Resistivity of TiO2 on both FTO and Graphene were of order 10-4 Ωcm. However, TiO2 annealed on graphene matrix exhibited a slightly lower resistivity 5.6 x10-4 Ωcm as compared to 6.0x10-4 Ωcm on FTO. Optical transmittance on visible region was lower for TiO2 on FTO than on SLG, 71.48% and 80.11% respectively. Urbach energy (Eu) for weak absorption region decreased with annealing rate. Urbach energies for 1°C/min TiO2 on FTO and SLG were 361 meV and 261meV respectively. This was used to account for decrease of disoders of films due to annealing. A striking relation between sheet resistivity and urbach was reported suggesting SLG as a suitable candidate for photoanode of a DSSC.
},
year = {2024}
}
TY - JOUR T1 - Influence of Graphene on Sheet Resistivity and Urbach Enery of Nano TiO2 for DSSC Electrode AU - Geoffrey Gitonga Riungu AU - Simon Waweru Mugo AU - James Mbiyu Ngaruyia AU - Leonard Gitu Y1 - 2024/07/23 PY - 2024 N1 - https://doi.org/10.11648/j.jmpt.20241001.12 DO - 10.11648/j.jmpt.20241001.12 T2 - Journal of Photonic Materials and Technology JF - Journal of Photonic Materials and Technology JO - Journal of Photonic Materials and Technology SP - 7 EP - 12 PB - Science Publishing Group SN - 2469-8431 UR - https://doi.org/10.11648/j.jmpt.20241001.12 AB - Importance of renewable energy cannot be over emphasized. Titanium IV oxide (TiO2) is the most suitable semiconductor for dye sensitized solar cell (DSSC) due to its chemical stability, non toxicity and excellent optoelectronic properties. In this research TiO2 is coated on graphene to enhance its charge transport aiming to reduce recombination which is a main set back in DSSCs. undestanding graphene- TiO2 contact is therefore essential for DSSC application. TiO2 thin films were deposited on single layer graphene (SLG) as well as on flourine tin oxide (FTO) using doctor blading technique. The films were annealed at rates of 2°C /min and 1°C/min up to a temperature of 450°C followed by sintering at this temperature for 30 minutes. Four point probe SRM-232 was used to measure sheet resistance of the samples. The film thickness were obtained from transmittance using pointwise unconstrained minimization approximation (PUMA). UV –VIS spectrophotometer was employed to measure transmittance. Resistivity of TiO2 on both FTO and Graphene were of order 10-4 Ωcm. However, TiO2 annealed on graphene matrix exhibited a slightly lower resistivity 5.6 x10-4 Ωcm as compared to 6.0x10-4 Ωcm on FTO. Optical transmittance on visible region was lower for TiO2 on FTO than on SLG, 71.48% and 80.11% respectively. Urbach energy (Eu) for weak absorption region decreased with annealing rate. Urbach energies for 1°C/min TiO2 on FTO and SLG were 361 meV and 261meV respectively. This was used to account for decrease of disoders of films due to annealing. A striking relation between sheet resistivity and urbach was reported suggesting SLG as a suitable candidate for photoanode of a DSSC. VL - 10 IS - 1 ER -
Department of Physics, College of Pure and Applied Sciences, Jomo Kenyatta University of Agriculture and Technology, Nairobi, Kenya
Department of Physics, College of Pure and Applied Sciences, Jomo Kenyatta University of Agriculture and Technology, Nairobi, Kenya
Department of Physics, College of Pure and Applied Sciences, Jomo Kenyatta University of Agriculture and Technology, Nairobi, Kenya
Department of Chemistry, College of Pure and Applied Sciences, Jomo Kenyatta University of Agriculture and Technology, Nairobi, Kenya
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