Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons

Modou Faye; Ousmane Ngom; Saliou Ndiaye; Cheikh Mbow; Bassirou Ba

doi:doi:10.11648/j.ijmsa.20200902.11

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Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons

Modou Faye, Ousmane Ngom, Saliou Ndiaye, Cheikh Mbow, Bassirou Ba

Published in International Journal of Materials Science and Applications (Volume 9, Issue 2)

Received: 27 March 2020 Accepted: 20 April 2020 Published: 18 May 2020

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Abstract

The author, taking into account the non-uniformity of dissociation, the recombination of excitons in the depletion region, as well as the variability of the coefficients as a function of temperature, used dimensional analysis. Thus, by grouping together the physical parameters, dependent and independent variables, he generates dimensionless numbers. Among the latter, we have the ratio between the diffusion time and the lifetime of the charge carriers (Fourier number); the ratio between the imposed heat flux and that thermal conduction (heating factor) and the ratio between the mobility of the excitons and that of the electrons. The motivation of the author is on the one hand to show the influence of these dimensionless numbers on the diffusion lengths of the charge carriers and on the other hand their influence and that of the diffusion lengths on the total photocurrent density of the carriers. Therefore, he studied the effects of the mean temperature and those of the mobility ratio on the total density of the photocurrent. In order to carry out such work, the author opted for the finite volume method combined with an iterative line-by-line relaxation method of the Gauss-Seidel type as a method of solving his physical problem.

Published in	International Journal of Materials Science and Applications (Volume 9, Issue 2)
DOI	10.11648/j.ijmsa.20200902.11
Page(s)	25-33
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2020. Published by Science Publishing Group

Keywords

Diffusion Lengths, Adimensional Numbers, Mobility, Excitons

References

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[2]	S. Zh. Karazhanov; Temperature and doping level dependence solar cell performance Including excitons. Solar Energy Materials & Solar Cells 63 (2000) 149-163.
[3]	R. Corkish, D. S. P. Chan, and M. A. Green; Excitons in silicon diodes and solar cells: A three-particle theory. Institute of Physics. [(S0021-8979 (1996) 0070-9].
[4]	M. Niane, S. Ndiaye, M. Faye, M. Pilor, M. Diagne, N. Mbengue, O. A. Niasse, B. Ba; Variation of Excess Excitons Density in Function to Silicon Solar Cell Parameters; Journal of Materials Science & Surface Engineering; volume 4 (6) (2016) 448-451.
[5]	M. Faye, M. MBow, M. Ba: Numerical Modeling of the Effects of Excitons in a Solar Cell Junction n+p of the Model by Extending the Space Charge Layer; International Review of Physics (I. RE. PHY), Vol. 8, N. 4 ISSN 1971-680X (August 2014).
[6]	M. Faye, M. Niane, S. Ndiaye, O. Ngom, C. Mbow, B. Ba, Numerical Modelling of Effects of Excitons on Photoelectric Properties of Cells; Journal of Scientific and Engineering Research; volume 6 (6) (2019) 138-146.
[7]	M. Faye, C. Mbow, B. Ba; Internal Electric Field In The Space Charge Layer Of A Solar Cell Based On Silicon In The Presence Of Excitons; International journal of scientific & technology research; volume 4 (2015) 66-69.
[8]	M. Faye, M. Niane, S. Ndiaye, C. Mbow, B. Ba; Effects of Variability of The Average Temperature on The Distribution of Electrons and of Excitons in A Semiconductor; Journal of Materials Science & Surface Engineering; volume 4 (7) (2016) 467-471.
[9]	M. Faye, S Ndiaye, C. MBow, B. Ba; Effects of the Average Temperature on the Photocurrent Density of Inorganic Solar Cells Based on Silicon in the Presence of Excitons, International Journal of Engineering Trends and Technology (IJETT); Volume 24 Number 3- June 2015 E-ISSN 2231-5381, P-ISSN: 2349-0918.
[10]	M. Faye, M MBow, M Ba: Development a Numerical Model Applicable to Inorganic and Organic Solar Cells Based on Silicon in the Presence of Excitons; Current Trends in Technology and Science, ISSN: 2279-0535; Volume 04, Issue 02 (Feb - Mar. 2015).
[11]	O. Ngom, M. Faye, M. Mbaye, C. Mbow, B. Ba; Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons; International Journal of Materials Science and Applications; volume 8 (4) (2019) 56-67.
[12]	R. B. Bird, W. E. Stewart, E N. Lightfoot: Transport Phenomena, John Wiley and Sons, Inc, New York 2001.
[13]	S. V. Patankar: “Numerical Heat Transfer and Fluid Flow”, Hemisphere Publishing Corporation, McGraw-Hill Book Company, 1981.
[14]	D. W. Peaceman, H. A. Rachford, The Numerical Solution of Parabolic and Elliptic Difference Equations, J. Soc. Ind., Appli. Math, 3, 28-43, 1955.
[15]	Ji-Ting Shieh, Chiou-Hua Liu, Hsin-Fei Meng, Shin-Rong Tseng, Yu-Chiang Chao, and Sheng-Fu Horng; The effect of carrier mobility in organic solar cells. Journal of Applied Physics 107, 084503 2010.

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APA Style

Modou Faye, Ousmane Ngom, Saliou Ndiaye, Cheikh Mbow, Bassirou Ba. (2020). Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons. International Journal of Materials Science and Applications, 9(2), 25-33. https://doi.org/10.11648/j.ijmsa.20200902.11

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ACS Style

Modou Faye; Ousmane Ngom; Saliou Ndiaye; Cheikh Mbow; Bassirou Ba. Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons. Int. J. Mater. Sci. Appl. 2020, 9(2), 25-33. doi: 10.11648/j.ijmsa.20200902.11

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AMA Style

Modou Faye, Ousmane Ngom, Saliou Ndiaye, Cheikh Mbow, Bassirou Ba. Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons. Int J Mater Sci Appl. 2020;9(2):25-33. doi: 10.11648/j.ijmsa.20200902.11

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@article{10.11648/j.ijmsa.20200902.11,
  author = {Modou Faye and Ousmane Ngom and Saliou Ndiaye and Cheikh Mbow and Bassirou Ba},
  title = {Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons},
  journal = {International Journal of Materials Science and Applications},
  volume = {9},
  number = {2},
  pages = {25-33},
  doi = {10.11648/j.ijmsa.20200902.11},
  url = {https://doi.org/10.11648/j.ijmsa.20200902.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20200902.11},
  abstract = {The author, taking into account the non-uniformity of dissociation, the recombination of excitons in the depletion region, as well as the variability of the coefficients as a function of temperature, used dimensional analysis. Thus, by grouping together the physical parameters, dependent and independent variables, he generates dimensionless numbers. Among the latter, we have the ratio between the diffusion time and the lifetime of the charge carriers (Fourier number); the ratio between the imposed heat flux and that thermal conduction (heating factor) and the ratio between the mobility of the excitons and that of the electrons. The motivation of the author is on the one hand to show the influence of these dimensionless numbers on the diffusion lengths of the charge carriers and on the other hand their influence and that of the diffusion lengths on the total photocurrent density of the carriers. Therefore, he studied the effects of the mean temperature and those of the mobility ratio on the total density of the photocurrent. In order to carry out such work, the author opted for the finite volume method combined with an iterative line-by-line relaxation method of the Gauss-Seidel type as a method of solving his physical problem.},
 year = {2020}
}

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TY  - JOUR
T1  - Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons
AU  - Modou Faye
AU  - Ousmane Ngom
AU  - Saliou Ndiaye
AU  - Cheikh Mbow
AU  - Bassirou Ba
Y1  - 2020/05/18
PY  - 2020
N1  - https://doi.org/10.11648/j.ijmsa.20200902.11
DO  - 10.11648/j.ijmsa.20200902.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 25
EP  - 33
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20200902.11
AB  - The author, taking into account the non-uniformity of dissociation, the recombination of excitons in the depletion region, as well as the variability of the coefficients as a function of temperature, used dimensional analysis. Thus, by grouping together the physical parameters, dependent and independent variables, he generates dimensionless numbers. Among the latter, we have the ratio between the diffusion time and the lifetime of the charge carriers (Fourier number); the ratio between the imposed heat flux and that thermal conduction (heating factor) and the ratio between the mobility of the excitons and that of the electrons. The motivation of the author is on the one hand to show the influence of these dimensionless numbers on the diffusion lengths of the charge carriers and on the other hand their influence and that of the diffusion lengths on the total photocurrent density of the carriers. Therefore, he studied the effects of the mean temperature and those of the mobility ratio on the total density of the photocurrent. In order to carry out such work, the author opted for the finite volume method combined with an iterative line-by-line relaxation method of the Gauss-Seidel type as a method of solving his physical problem.
VL  - 9
IS  - 2
ER  -

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Author Information

Modou Faye

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology University Cheikh Anta DIOP, Dakar, Senegal
Ousmane Ngom

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology University Cheikh Anta DIOP, Dakar, Senegal
Saliou Ndiaye

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology University Cheikh Anta DIOP, Dakar, Senegal
Cheikh Mbow

Department of Physics, Laboratory of Fluid Mechanics, Hydraulics and Transfers, Faculty of Science and Technology University Cheikh Anta DIOP, Dakar, Senegal
Bassirou Ba

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology University Cheikh Anta DIOP, Dakar, Senegal

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APA Style

Modou Faye, Ousmane Ngom, Saliou Ndiaye, Cheikh Mbow, Bassirou Ba. (2020). Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons. International Journal of Materials Science and Applications, 9(2), 25-33. https://doi.org/10.11648/j.ijmsa.20200902.11

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ACS Style

Modou Faye; Ousmane Ngom; Saliou Ndiaye; Cheikh Mbow; Bassirou Ba. Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons. Int. J. Mater. Sci. Appl. 2020, 9(2), 25-33. doi: 10.11648/j.ijmsa.20200902.11

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AMA Style

Modou Faye, Ousmane Ngom, Saliou Ndiaye, Cheikh Mbow, Bassirou Ba. Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons. Int J Mater Sci Appl. 2020;9(2):25-33. doi: 10.11648/j.ijmsa.20200902.11

Copy | Download

@article{10.11648/j.ijmsa.20200902.11,
  author = {Modou Faye and Ousmane Ngom and Saliou Ndiaye and Cheikh Mbow and Bassirou Ba},
  title = {Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons},
  journal = {International Journal of Materials Science and Applications},
  volume = {9},
  number = {2},
  pages = {25-33},
  doi = {10.11648/j.ijmsa.20200902.11},
  url = {https://doi.org/10.11648/j.ijmsa.20200902.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20200902.11},
  abstract = {The author, taking into account the non-uniformity of dissociation, the recombination of excitons in the depletion region, as well as the variability of the coefficients as a function of temperature, used dimensional analysis. Thus, by grouping together the physical parameters, dependent and independent variables, he generates dimensionless numbers. Among the latter, we have the ratio between the diffusion time and the lifetime of the charge carriers (Fourier number); the ratio between the imposed heat flux and that thermal conduction (heating factor) and the ratio between the mobility of the excitons and that of the electrons. The motivation of the author is on the one hand to show the influence of these dimensionless numbers on the diffusion lengths of the charge carriers and on the other hand their influence and that of the diffusion lengths on the total photocurrent density of the carriers. Therefore, he studied the effects of the mean temperature and those of the mobility ratio on the total density of the photocurrent. In order to carry out such work, the author opted for the finite volume method combined with an iterative line-by-line relaxation method of the Gauss-Seidel type as a method of solving his physical problem.},
 year = {2020}
}

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TY  - JOUR
T1  - Excitons Diffusion Length, Tree Dimensionless Numbers and Mean Temperature Dependence of Semiconductor Performance Including Excitons
AU  - Modou Faye
AU  - Ousmane Ngom
AU  - Saliou Ndiaye
AU  - Cheikh Mbow
AU  - Bassirou Ba
Y1  - 2020/05/18
PY  - 2020
N1  - https://doi.org/10.11648/j.ijmsa.20200902.11
DO  - 10.11648/j.ijmsa.20200902.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 25
EP  - 33
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20200902.11
AB  - The author, taking into account the non-uniformity of dissociation, the recombination of excitons in the depletion region, as well as the variability of the coefficients as a function of temperature, used dimensional analysis. Thus, by grouping together the physical parameters, dependent and independent variables, he generates dimensionless numbers. Among the latter, we have the ratio between the diffusion time and the lifetime of the charge carriers (Fourier number); the ratio between the imposed heat flux and that thermal conduction (heating factor) and the ratio between the mobility of the excitons and that of the electrons. The motivation of the author is on the one hand to show the influence of these dimensionless numbers on the diffusion lengths of the charge carriers and on the other hand their influence and that of the diffusion lengths on the total photocurrent density of the carriers. Therefore, he studied the effects of the mean temperature and those of the mobility ratio on the total density of the photocurrent. In order to carry out such work, the author opted for the finite volume method combined with an iterative line-by-line relaxation method of the Gauss-Seidel type as a method of solving his physical problem.
VL  - 9
IS  - 2
ER  -

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