Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons

Ousmane Ngom; Modou Faye; Mamadou Mbaye; Cheikh Mbow; Bassirou Ba

doi:doi:10.11648/j.ijmsa.20190804.11

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Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons

Ousmane Ngom, Modou Faye, Mamadou Mbaye, Cheikh Mbow, Bassirou Ba

Published in International Journal of Materials Science and Applications (Volume 8, Issue 4)

Received: 10 July 2019 Accepted: 18 August 2019 Published: 6 September 2019

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Abstract

In this article, a detailed study of the physical phenomena in the base of a silicon heterojunction solar cell (HIT) is elaborated. To carry out this work we have established a mathematical model which is in the form of a system of two continuity equations. The latter are subjected to physical conditions of nature to define our field of study. This system of continuity equations is solved using a computational program in a digital programming language. Numerical analysis is used in this study because the mathematical system describing the transport phenomena of load carriers (electrons and excitons) in a silicon heterojunction photovoltaic cell is very complex. Thus, to facilitate numerical resolution, the dimensional parameters of the physical system are rendered dimensionless. The resulting dimensionless equations are discretized by the finite volume method. They are then implemented in a calculation program by an iterative line-by-line relaxation method of the Gauss-Siedel type. In addition, with a low density coupling coefficient b=10^-16cm³s^-1 that depends on the material’s properties, the influence of temperature on the diffusion lengths, on the carrier and photocurrent densities, and on the internal quantum yield is studied. This study is carried out using polychromatic illumination with ultraviolet, visible and infrared wavelengths.

Published in	International Journal of Materials Science and Applications (Volume 8, Issue 4) This article belongs to the Special Issue Advanced Materials for Energy Storage and Conversion Applications
DOI	10.11648/j.ijmsa.20190804.11
Page(s)	56-67
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2019. Published by Science Publishing Group

Keywords

Heterojunction (HIT), Temperature, Excitons, Spectral Response, Quantum Performance

References

[1]	M. Faye, M. Niane, S. Ndiaye, O. Ngom, C. Mbow, B. Ba; Numerical Modeling of Effects of Excitons on Photoelectric Properties of Cells; Journal of Scientific and Engineering Research volume 6 (6) (2019) 138-146.
[2]	M. Burgelman and B. Minnaert; Including excitons in semiconductor solar cell modelling; Thin Solid Films 511-512, 214-218 (2006).
[3]	S. Zh. Karazhanov; Temperature and doping level dependence solar cell performance Including excitons. Solar Energy Materials & Solar Cells 63 (2000) 149-163.
[4]	M. Faye, C. Mbow, B. Ba; Internal Electric Field In The Space Charge Layer Of A Solar Cell Based On Silicon In The Presence Of Excitons; International journal of scientific & technology research volume 4 (2015) 66-69.
[5]	M. Faye, M. Niane, S. Ndiaye, C. Mbow, B. Ba; Effects of Variability of The Average Temperature on The Distribution of Electrons and of Excitons in A Semiconductor; Journal of Materials Science & Surface Engineering; volume 4 (7) (2016) 467-471.
[6]	A. Armin, D. M. Stoltzfus, J. E. Donaghey, A. J. Clulow, R. C. R. Nagiri, P. L. Burn, I. R. Gentle and P. Meredith; Engineering dielectric constants in organic semiconductors; The Royal Society of Chemistry (2017).
[7]	N. Hiroshiba, K. Morimoto, R. Hayakawa, Y. Wakayama, T. Mori, and K. Matsuishi; Exciton dynamics at the heteromolecular interface between N, N’-dioctyl-3,4,9,10-perylenedicarboxilimide and quaterrylene studied using time-resolved photoluminescence; AIP ADVANCES 4, 067112 (2014).
[8]	Oleksandr V. Mikhnenko, Paul W. M. Blom, Thuc-Quyen Nguyen; Exciton Diffusion in Organic Semiconductors; Energy & Environmental Science 1-64 (2015).
[9]	M. K. Riede, T. Mueller, B. Maennig, K. Leo, K. O. Sylvester-Hvid, B. Zimmermann, M. Niggemann and A. Gombert; Comment on “Roles of donor and acceptor nanodomains in 6% efficient thermally annealed polymer photovoltaics”; Appl. Phys. Lett. 90, 163511 (2007).
[10]	S. Blumstengel, S. Sadofev, C. Xu, J. Puls, and F. Henneberger; Converting Wannier into Frenkel Excitons in an Inorganic/Organic Hybrid Semiconductor Nanostructure; Physical review letters; PRL 97, 237401 (2006).
[11]	Hangleiter, R. Hacker; Enhancement of band-to-band Auger recombination by electron-hole correlations; Phys. Rev. Lett. 65, 215 (1990).
[12]	Patankar, S. V.; Numerical Heat Transfer and Fluid Flow. Hemi- sphere Publishing Corporation, Taylor and Francis Group, New York 1980.
[13]	C. Klingshirn, H. Kalt, M. Umlauff, W. Petri, F. A. Majumder, S. V. Bogdanov, W. Langbein, M. Grün, M. Hetterich, K. P. Geyzers, M. Heuken, A. Naumov, H. Stanzl, W. Gebhardt, “Stimulated emission of II–VI epitaxial layers”, J. Cryst. Growth 138, 786, (1994) p. 786-790.
[14]	D. C. Reynolds, C. W. Litton, T. C. Collins, “Zeeman effects in the edge emission and absorption of ZnO”, Phys. Rev. 140, A1726, (1965) 1726-1734.
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APA Style

Ousmane Ngom, Modou Faye, Mamadou Mbaye, Cheikh Mbow, Bassirou Ba. (2019). Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons. International Journal of Materials Science and Applications, 8(4), 56-67. https://doi.org/10.11648/j.ijmsa.20190804.11

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ACS Style

Ousmane Ngom; Modou Faye; Mamadou Mbaye; Cheikh Mbow; Bassirou Ba. Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons. Int. J. Mater. Sci. Appl. 2019, 8(4), 56-67. doi: 10.11648/j.ijmsa.20190804.11

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AMA Style

Ousmane Ngom, Modou Faye, Mamadou Mbaye, Cheikh Mbow, Bassirou Ba. Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons. Int J Mater Sci Appl. 2019;8(4):56-67. doi: 10.11648/j.ijmsa.20190804.11

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@article{10.11648/j.ijmsa.20190804.11,
  author = {Ousmane Ngom and Modou Faye and Mamadou Mbaye and Cheikh Mbow and Bassirou Ba},
  title = {Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons},
  journal = {International Journal of Materials Science and Applications},
  volume = {8},
  number = {4},
  pages = {56-67},
  doi = {10.11648/j.ijmsa.20190804.11},
  url = {https://doi.org/10.11648/j.ijmsa.20190804.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20190804.11},
  abstract = {In this article, a detailed study of the physical phenomena in the base of a silicon heterojunction solar cell (HIT) is elaborated. To carry out this work we have established a mathematical model which is in the form of a system of two continuity equations. The latter are subjected to physical conditions of nature to define our field of study. This system of continuity equations is solved using a computational program in a digital programming language. Numerical analysis is used in this study because the mathematical system describing the transport phenomena of load carriers (electrons and excitons) in a silicon heterojunction photovoltaic cell is very complex. Thus, to facilitate numerical resolution, the dimensional parameters of the physical system are rendered dimensionless. The resulting dimensionless equations are discretized by the finite volume method. They are then implemented in a calculation program by an iterative line-by-line relaxation method of the Gauss-Siedel type. In addition, with a low density coupling coefficient b=10-16cm3s-1 that depends on the material’s properties, the influence of temperature on the diffusion lengths, on the carrier and photocurrent densities, and on the internal quantum yield is studied. This study is carried out using polychromatic illumination with ultraviolet, visible and infrared wavelengths.},
 year = {2019}
}

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TY  - JOUR
T1  - Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons
AU  - Ousmane Ngom
AU  - Modou Faye
AU  - Mamadou Mbaye
AU  - Cheikh Mbow
AU  - Bassirou Ba
Y1  - 2019/09/06
PY  - 2019
N1  - https://doi.org/10.11648/j.ijmsa.20190804.11
DO  - 10.11648/j.ijmsa.20190804.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 56
EP  - 67
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20190804.11
AB  - In this article, a detailed study of the physical phenomena in the base of a silicon heterojunction solar cell (HIT) is elaborated. To carry out this work we have established a mathematical model which is in the form of a system of two continuity equations. The latter are subjected to physical conditions of nature to define our field of study. This system of continuity equations is solved using a computational program in a digital programming language. Numerical analysis is used in this study because the mathematical system describing the transport phenomena of load carriers (electrons and excitons) in a silicon heterojunction photovoltaic cell is very complex. Thus, to facilitate numerical resolution, the dimensional parameters of the physical system are rendered dimensionless. The resulting dimensionless equations are discretized by the finite volume method. They are then implemented in a calculation program by an iterative line-by-line relaxation method of the Gauss-Siedel type. In addition, with a low density coupling coefficient b=10-16cm3s-1 that depends on the material’s properties, the influence of temperature on the diffusion lengths, on the carrier and photocurrent densities, and on the internal quantum yield is studied. This study is carried out using polychromatic illumination with ultraviolet, visible and infrared wavelengths.
VL  - 8
IS  - 4
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Author Information

Ousmane Ngom

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal
Modou Faye

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal
Mamadou Mbaye

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal
Cheikh Mbow

Department of Physics, Laboratory of Fluid Mechanics, Hydraulics and Transfers, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal
Bassirou Ba

Department of Physics, Laboratory of Semiconductors and Solar Energy, Faculty of Science and Technology, University Cheikh Anta DIOP, Dakar, Senegal

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APA Style

Ousmane Ngom, Modou Faye, Mamadou Mbaye, Cheikh Mbow, Bassirou Ba. (2019). Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons. International Journal of Materials Science and Applications, 8(4), 56-67. https://doi.org/10.11648/j.ijmsa.20190804.11

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ACS Style

Ousmane Ngom; Modou Faye; Mamadou Mbaye; Cheikh Mbow; Bassirou Ba. Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons. Int. J. Mater. Sci. Appl. 2019, 8(4), 56-67. doi: 10.11648/j.ijmsa.20190804.11

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AMA Style

Ousmane Ngom, Modou Faye, Mamadou Mbaye, Cheikh Mbow, Bassirou Ba. Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons. Int J Mater Sci Appl. 2019;8(4):56-67. doi: 10.11648/j.ijmsa.20190804.11

Copy | Download

@article{10.11648/j.ijmsa.20190804.11,
  author = {Ousmane Ngom and Modou Faye and Mamadou Mbaye and Cheikh Mbow and Bassirou Ba},
  title = {Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons},
  journal = {International Journal of Materials Science and Applications},
  volume = {8},
  number = {4},
  pages = {56-67},
  doi = {10.11648/j.ijmsa.20190804.11},
  url = {https://doi.org/10.11648/j.ijmsa.20190804.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20190804.11},
  abstract = {In this article, a detailed study of the physical phenomena in the base of a silicon heterojunction solar cell (HIT) is elaborated. To carry out this work we have established a mathematical model which is in the form of a system of two continuity equations. The latter are subjected to physical conditions of nature to define our field of study. This system of continuity equations is solved using a computational program in a digital programming language. Numerical analysis is used in this study because the mathematical system describing the transport phenomena of load carriers (electrons and excitons) in a silicon heterojunction photovoltaic cell is very complex. Thus, to facilitate numerical resolution, the dimensional parameters of the physical system are rendered dimensionless. The resulting dimensionless equations are discretized by the finite volume method. They are then implemented in a calculation program by an iterative line-by-line relaxation method of the Gauss-Siedel type. In addition, with a low density coupling coefficient b=10-16cm3s-1 that depends on the material’s properties, the influence of temperature on the diffusion lengths, on the carrier and photocurrent densities, and on the internal quantum yield is studied. This study is carried out using polychromatic illumination with ultraviolet, visible and infrared wavelengths.},
 year = {2019}
}

Copy | Download

TY  - JOUR
T1  - Numerical Study of the Effect of Temperature on the Performance of a Silicon Heterojunction Solar Cell (HIT) in the Presence of Excitons
AU  - Ousmane Ngom
AU  - Modou Faye
AU  - Mamadou Mbaye
AU  - Cheikh Mbow
AU  - Bassirou Ba
Y1  - 2019/09/06
PY  - 2019
N1  - https://doi.org/10.11648/j.ijmsa.20190804.11
DO  - 10.11648/j.ijmsa.20190804.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 56
EP  - 67
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20190804.11
AB  - In this article, a detailed study of the physical phenomena in the base of a silicon heterojunction solar cell (HIT) is elaborated. To carry out this work we have established a mathematical model which is in the form of a system of two continuity equations. The latter are subjected to physical conditions of nature to define our field of study. This system of continuity equations is solved using a computational program in a digital programming language. Numerical analysis is used in this study because the mathematical system describing the transport phenomena of load carriers (electrons and excitons) in a silicon heterojunction photovoltaic cell is very complex. Thus, to facilitate numerical resolution, the dimensional parameters of the physical system are rendered dimensionless. The resulting dimensionless equations are discretized by the finite volume method. They are then implemented in a calculation program by an iterative line-by-line relaxation method of the Gauss-Siedel type. In addition, with a low density coupling coefficient b=10-16cm3s-1 that depends on the material’s properties, the influence of temperature on the diffusion lengths, on the carrier and photocurrent densities, and on the internal quantum yield is studied. This study is carried out using polychromatic illumination with ultraviolet, visible and infrared wavelengths.
VL  - 8
IS  - 4
ER  -

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