Continuous reducing the size of transistor technology has enabled extraordinary improvements in the switching speed, density, functionality and cost of microprocessors. Integrated Circuit industry is pursuing Moore’s curve down to deep-nanoscale dimensions. Advanced transistor technology now faces many challenges that together result in static power consumption due to leakage currents. In fact, leakage currents are responsible for more than 50% of the total power consumption in nanoscale designs. In deep-nanoscale arena, this percentage will increase further. However, diagnosing of the interface quality and interaction between insulators and semiconductors is significant to reduce the leakage current and achieve the high performance of switching devices in the nanoscale domain. Continuous scaling down has required drastic decreases of the SiO2 dielectric film thickness to achieve ever-higher capacitance densities. Fundamental limits of SiO2 as a dielectric material, imposed by electron tunneling, will be reached as this SiO2 film thickness approaches ~1nm. Therefore, alternate high-k interlayer dielectric material will be needed to replace SiO2 as a capacitor and gate dielectric material. Numerous alternate high-k materials are being actively investigated, ranging from Al2O3 (k ~ 9) to HfO2 (k ~ 25). High-k materials hold the promise of achieving very high capacitance densities with relatively thick films.
| Published in | International Journal of Materials Science and Applications (Volume 7, Issue 5) |
| DOI | 10.11648/j.ijmsa.20180705.11 |
| Page(s) | 167-173 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2018. Published by Science Publishing Group |
Dielectric Materials, High-k Materials, Hafnium Oxide, MOS Transistor, Nanoscale Domain
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APA Style
Muhammad Sana Ullah, Emadelden Fouad. (2018). Scrutiny of Leakage Currents with Insulating Materials for Transistor Applications. International Journal of Materials Science and Applications, 7(5), 167-173. https://doi.org/10.11648/j.ijmsa.20180705.11
ACS Style
Muhammad Sana Ullah; Emadelden Fouad. Scrutiny of Leakage Currents with Insulating Materials for Transistor Applications. Int. J. Mater. Sci. Appl. 2018, 7(5), 167-173. doi: 10.11648/j.ijmsa.20180705.11
AMA Style
Muhammad Sana Ullah, Emadelden Fouad. Scrutiny of Leakage Currents with Insulating Materials for Transistor Applications. Int J Mater Sci Appl. 2018;7(5):167-173. doi: 10.11648/j.ijmsa.20180705.11
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Download@article{10.11648/j.ijmsa.20180705.11,
author = {Muhammad Sana Ullah and Emadelden Fouad},
title = {Scrutiny of Leakage Currents with Insulating Materials for Transistor Applications},
journal = {International Journal of Materials Science and Applications},
volume = {7},
number = {5},
pages = {167-173},
doi = {10.11648/j.ijmsa.20180705.11},
url = {https://doi.org/10.11648/j.ijmsa.20180705.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20180705.11},
abstract = {Continuous reducing the size of transistor technology has enabled extraordinary improvements in the switching speed, density, functionality and cost of microprocessors. Integrated Circuit industry is pursuing Moore’s curve down to deep-nanoscale dimensions. Advanced transistor technology now faces many challenges that together result in static power consumption due to leakage currents. In fact, leakage currents are responsible for more than 50% of the total power consumption in nanoscale designs. In deep-nanoscale arena, this percentage will increase further. However, diagnosing of the interface quality and interaction between insulators and semiconductors is significant to reduce the leakage current and achieve the high performance of switching devices in the nanoscale domain. Continuous scaling down has required drastic decreases of the SiO2 dielectric film thickness to achieve ever-higher capacitance densities. Fundamental limits of SiO2 as a dielectric material, imposed by electron tunneling, will be reached as this SiO2 film thickness approaches ~1nm. Therefore, alternate high-k interlayer dielectric material will be needed to replace SiO2 as a capacitor and gate dielectric material. Numerous alternate high-k materials are being actively investigated, ranging from Al2O3 (k ~ 9) to HfO2 (k ~ 25). High-k materials hold the promise of achieving very high capacitance densities with relatively thick films.},
year = {2018}
}
TY - JOUR T1 - Scrutiny of Leakage Currents with Insulating Materials for Transistor Applications AU - Muhammad Sana Ullah AU - Emadelden Fouad Y1 - 2018/09/28 PY - 2018 N1 - https://doi.org/10.11648/j.ijmsa.20180705.11 DO - 10.11648/j.ijmsa.20180705.11 T2 - International Journal of Materials Science and Applications JF - International Journal of Materials Science and Applications JO - International Journal of Materials Science and Applications SP - 167 EP - 173 PB - Science Publishing Group SN - 2327-2643 UR - https://doi.org/10.11648/j.ijmsa.20180705.11 AB - Continuous reducing the size of transistor technology has enabled extraordinary improvements in the switching speed, density, functionality and cost of microprocessors. Integrated Circuit industry is pursuing Moore’s curve down to deep-nanoscale dimensions. Advanced transistor technology now faces many challenges that together result in static power consumption due to leakage currents. In fact, leakage currents are responsible for more than 50% of the total power consumption in nanoscale designs. In deep-nanoscale arena, this percentage will increase further. However, diagnosing of the interface quality and interaction between insulators and semiconductors is significant to reduce the leakage current and achieve the high performance of switching devices in the nanoscale domain. Continuous scaling down has required drastic decreases of the SiO2 dielectric film thickness to achieve ever-higher capacitance densities. Fundamental limits of SiO2 as a dielectric material, imposed by electron tunneling, will be reached as this SiO2 film thickness approaches ~1nm. Therefore, alternate high-k interlayer dielectric material will be needed to replace SiO2 as a capacitor and gate dielectric material. Numerous alternate high-k materials are being actively investigated, ranging from Al2O3 (k ~ 9) to HfO2 (k ~ 25). High-k materials hold the promise of achieving very high capacitance densities with relatively thick films. VL - 7 IS - 5 ER -
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