Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface

Filip Ilie

doi:doi:10.11648/j.ijmsa.20170604.15

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Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface

Filip Ilie

Published in International Journal of Materials Science and Applications (Volume 6, Issue 4)

Received: 19 June 2017 Accepted: 28 June 2017 Published: 17 July 2017

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Abstract

Among other the planarization technologies, Chemical mechanical planarization (CMP) is the unique global planarization technology, which makes it be continuously investigated. The planarization (polishing) and micromachining are of considerable interest to different engineering fields, such as the friction couples that function with the selective transfer and is used to remove excess of metal, obtained in process of selective transfer and for the understanding of planarization and micromachining. For an effective planarization, it is necessary to minimize the surface defects while attaining a good planarity with optimal material removal rate (MRR). These requirements can be met by controlling the chemical and mechanical interactions during the polishing process, or by engineering the slurry chemistry, particles properties, and stability. Effect of the etching during CMP process of the selective layer surface are presented in this paper. To optimize the process of selective layer CMP a blanket selective layer samples were polished with, colloidal silica-based slurry which contains a citric acid and an oxidizer (H₂O₂). Surface studies using X-ray photoelectron spectroscopy (XPS) were performed on selective layer samples after chemical etching in order to determine the effect that different polishing parameters (i.e., pH and H₂O₂ concentration) have on the selective layer surface. Then, the samples were passively soaked in an acidic slurry mixture containing different concentrations of H₂O₂ to determine how the chemical action alone affects the removal of the selective layer. The etching results revealed that a cuprous oxide (Cu₂O) forms on the surface of the etched metallic selective layer while polished samples showed CuO and Cu(OH)₂. The effect of these selective layer oxide films on the removal of the selective layer in passive etching and CMP is discussed.

Published in	International Journal of Materials Science and Applications (Volume 6, Issue 4)
DOI	10.11648/j.ijmsa.20170604.15
Page(s)	193-199
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Selective Layer, Etching, Chemical Mechanical Planarization, Slurry, X-Ray Photoelectron Spectroscopy

References

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Filip Ilie. (2017). Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface. International Journal of Materials Science and Applications, 6(4), 193-199. https://doi.org/10.11648/j.ijmsa.20170604.15

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ACS Style

Filip Ilie. Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface. Int. J. Mater. Sci. Appl. 2017, 6(4), 193-199. doi: 10.11648/j.ijmsa.20170604.15

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AMA Style

Filip Ilie. Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface. Int J Mater Sci Appl. 2017;6(4):193-199. doi: 10.11648/j.ijmsa.20170604.15

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@article{10.11648/j.ijmsa.20170604.15,
  author = {Filip Ilie},
  title = {Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface},
  journal = {International Journal of Materials Science and Applications},
  volume = {6},
  number = {4},
  pages = {193-199},
  doi = {10.11648/j.ijmsa.20170604.15},
  url = {https://doi.org/10.11648/j.ijmsa.20170604.15},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170604.15},
  abstract = {Among other the planarization technologies, Chemical mechanical planarization (CMP) is the unique global planarization technology, which makes it be continuously investigated. The planarization (polishing) and micromachining are of considerable interest to different engineering fields, such as the friction couples that function with the selective transfer and is used to remove excess of metal, obtained in process of selective transfer and for the understanding of planarization and micromachining. For an effective planarization, it is necessary to minimize the surface defects while attaining a good planarity with optimal material removal rate (MRR). These requirements can be met by controlling the chemical and mechanical interactions during the polishing process, or by engineering the slurry chemistry, particles properties, and stability. Effect of the etching during CMP process of the selective layer surface are presented in this paper. To optimize the process of selective layer CMP a blanket selective layer samples were polished with, colloidal silica-based slurry which contains a citric acid and an oxidizer (H2O2). Surface studies using X-ray photoelectron spectroscopy (XPS) were performed on selective layer samples after chemical etching in order to determine the effect that different polishing parameters (i.e., pH and H2O2 concentration) have on the selective layer surface. Then, the samples were passively soaked in an acidic slurry mixture containing different concentrations of H2O2 to determine how the chemical action alone affects the removal of the selective layer. The etching results revealed that a cuprous oxide (Cu2O) forms on the surface of the etched metallic selective layer while polished samples showed CuO and Cu(OH)2. The effect of these selective layer oxide films on the removal of the selective layer in passive etching and CMP is discussed.},
 year = {2017}
}

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TY  - JOUR
T1  - Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface
AU  - Filip Ilie
Y1  - 2017/07/17
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmsa.20170604.15
DO  - 10.11648/j.ijmsa.20170604.15
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 193
EP  - 199
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20170604.15
AB  - Among other the planarization technologies, Chemical mechanical planarization (CMP) is the unique global planarization technology, which makes it be continuously investigated. The planarization (polishing) and micromachining are of considerable interest to different engineering fields, such as the friction couples that function with the selective transfer and is used to remove excess of metal, obtained in process of selective transfer and for the understanding of planarization and micromachining. For an effective planarization, it is necessary to minimize the surface defects while attaining a good planarity with optimal material removal rate (MRR). These requirements can be met by controlling the chemical and mechanical interactions during the polishing process, or by engineering the slurry chemistry, particles properties, and stability. Effect of the etching during CMP process of the selective layer surface are presented in this paper. To optimize the process of selective layer CMP a blanket selective layer samples were polished with, colloidal silica-based slurry which contains a citric acid and an oxidizer (H2O2). Surface studies using X-ray photoelectron spectroscopy (XPS) were performed on selective layer samples after chemical etching in order to determine the effect that different polishing parameters (i.e., pH and H2O2 concentration) have on the selective layer surface. Then, the samples were passively soaked in an acidic slurry mixture containing different concentrations of H2O2 to determine how the chemical action alone affects the removal of the selective layer. The etching results revealed that a cuprous oxide (Cu2O) forms on the surface of the etched metallic selective layer while polished samples showed CuO and Cu(OH)2. The effect of these selective layer oxide films on the removal of the selective layer in passive etching and CMP is discussed.
VL  - 6
IS  - 4
ER  -

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Author Information

Filip Ilie

Department of Machine Elements and Tribology, Polytechnic University of Bucharest, Bucharest, Romania

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Plain Text BibTeX RIS

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Filip Ilie. (2017). Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface. International Journal of Materials Science and Applications, 6(4), 193-199. https://doi.org/10.11648/j.ijmsa.20170604.15

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ACS Style

Filip Ilie. Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface. Int. J. Mater. Sci. Appl. 2017, 6(4), 193-199. doi: 10.11648/j.ijmsa.20170604.15

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AMA Style

Filip Ilie. Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface. Int J Mater Sci Appl. 2017;6(4):193-199. doi: 10.11648/j.ijmsa.20170604.15

Copy | Download

@article{10.11648/j.ijmsa.20170604.15,
  author = {Filip Ilie},
  title = {Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface},
  journal = {International Journal of Materials Science and Applications},
  volume = {6},
  number = {4},
  pages = {193-199},
  doi = {10.11648/j.ijmsa.20170604.15},
  url = {https://doi.org/10.11648/j.ijmsa.20170604.15},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170604.15},
  abstract = {Among other the planarization technologies, Chemical mechanical planarization (CMP) is the unique global planarization technology, which makes it be continuously investigated. The planarization (polishing) and micromachining are of considerable interest to different engineering fields, such as the friction couples that function with the selective transfer and is used to remove excess of metal, obtained in process of selective transfer and for the understanding of planarization and micromachining. For an effective planarization, it is necessary to minimize the surface defects while attaining a good planarity with optimal material removal rate (MRR). These requirements can be met by controlling the chemical and mechanical interactions during the polishing process, or by engineering the slurry chemistry, particles properties, and stability. Effect of the etching during CMP process of the selective layer surface are presented in this paper. To optimize the process of selective layer CMP a blanket selective layer samples were polished with, colloidal silica-based slurry which contains a citric acid and an oxidizer (H2O2). Surface studies using X-ray photoelectron spectroscopy (XPS) were performed on selective layer samples after chemical etching in order to determine the effect that different polishing parameters (i.e., pH and H2O2 concentration) have on the selective layer surface. Then, the samples were passively soaked in an acidic slurry mixture containing different concentrations of H2O2 to determine how the chemical action alone affects the removal of the selective layer. The etching results revealed that a cuprous oxide (Cu2O) forms on the surface of the etched metallic selective layer while polished samples showed CuO and Cu(OH)2. The effect of these selective layer oxide films on the removal of the selective layer in passive etching and CMP is discussed.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Effect of the Etching on Chemical Mechanical Planarization of the Selective Layer Surface
AU  - Filip Ilie
Y1  - 2017/07/17
PY  - 2017
N1  - https://doi.org/10.11648/j.ijmsa.20170604.15
DO  - 10.11648/j.ijmsa.20170604.15
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 193
EP  - 199
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20170604.15
AB  - Among other the planarization technologies, Chemical mechanical planarization (CMP) is the unique global planarization technology, which makes it be continuously investigated. The planarization (polishing) and micromachining are of considerable interest to different engineering fields, such as the friction couples that function with the selective transfer and is used to remove excess of metal, obtained in process of selective transfer and for the understanding of planarization and micromachining. For an effective planarization, it is necessary to minimize the surface defects while attaining a good planarity with optimal material removal rate (MRR). These requirements can be met by controlling the chemical and mechanical interactions during the polishing process, or by engineering the slurry chemistry, particles properties, and stability. Effect of the etching during CMP process of the selective layer surface are presented in this paper. To optimize the process of selective layer CMP a blanket selective layer samples were polished with, colloidal silica-based slurry which contains a citric acid and an oxidizer (H2O2). Surface studies using X-ray photoelectron spectroscopy (XPS) were performed on selective layer samples after chemical etching in order to determine the effect that different polishing parameters (i.e., pH and H2O2 concentration) have on the selective layer surface. Then, the samples were passively soaked in an acidic slurry mixture containing different concentrations of H2O2 to determine how the chemical action alone affects the removal of the selective layer. The etching results revealed that a cuprous oxide (Cu2O) forms on the surface of the etched metallic selective layer while polished samples showed CuO and Cu(OH)2. The effect of these selective layer oxide films on the removal of the selective layer in passive etching and CMP is discussed.
VL  - 6
IS  - 4
ER  -

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