Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode

Xiuguang Jin; Fumiaki Ichihashi; Atsushi Mano; Masahiko Suzuki; Tsuneo Yasue; Takanori Koshikawa; Yoshikazu Takeda

doi:doi:10.11648/j.ijmsa.20160504.11

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Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode

Xiuguang Jin, Fumiaki Ichihashi, Atsushi Mano, Masahiko Suzuki, Tsuneo Yasue, Takanori Koshikawa, Yoshikazu Takeda

Published in International Journal of Materials Science and Applications (Volume 5, Issue 4)

Received: 5 August 2016 Published: 8 August 2016

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Abstract

We successfully developed a new transmission-type GaAs/GaAsP strained superlattice photocathode with an AlGaAs transparent inter-layer and Si₃N₄ anti-reflection coating. The electrons emitted from this photocathode showed a high spin polarization of 90% with a quantum efficiency as high as 0.4%. In the application for spin-polarized low energy electron microscope, a high emission current of over 1 µA was observed at 3.6 mW pump laser power. Transmission electron microscopy observation revealed that there were a small disorder and some dislocations in the GaAs/GaAsP superlattice layers. The disordered superlattice layers result in a fluctuation of the superlattice band structure and the dislocations trap the photo-electrons during the diffusion to the surface. Both of the defects influenced the performance of spin-polarized photocathode.

Published in	International Journal of Materials Science and Applications (Volume 5, Issue 4)
DOI	10.11648/j.ijmsa.20160504.11
Page(s)	178-182
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2016. Published by Science Publishing Group

Keywords

Spin Polarization, Photocathode, Superlattice, Microscopy

References

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APA Style

Xiuguang Jin, Fumiaki Ichihashi, Atsushi Mano, Masahiko Suzuki, Tsuneo Yasue, et al. (2016). Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode. International Journal of Materials Science and Applications, 5(4), 178-182. https://doi.org/10.11648/j.ijmsa.20160504.11

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ACS Style

Xiuguang Jin; Fumiaki Ichihashi; Atsushi Mano; Masahiko Suzuki; Tsuneo Yasue, et al. Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode. Int. J. Mater. Sci. Appl. 2016, 5(4), 178-182. doi: 10.11648/j.ijmsa.20160504.11

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AMA Style

Xiuguang Jin, Fumiaki Ichihashi, Atsushi Mano, Masahiko Suzuki, Tsuneo Yasue, et al. Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode. Int J Mater Sci Appl. 2016;5(4):178-182. doi: 10.11648/j.ijmsa.20160504.11

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@article{10.11648/j.ijmsa.20160504.11,
  author = {Xiuguang Jin and Fumiaki Ichihashi and Atsushi Mano and Masahiko Suzuki and Tsuneo Yasue and Takanori Koshikawa and Yoshikazu Takeda},
  title = {Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode},
  journal = {International Journal of Materials Science and Applications},
  volume = {5},
  number = {4},
  pages = {178-182},
  doi = {10.11648/j.ijmsa.20160504.11},
  url = {https://doi.org/10.11648/j.ijmsa.20160504.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160504.11},
  abstract = {We successfully developed a new transmission-type GaAs/GaAsP strained superlattice photocathode with an AlGaAs transparent inter-layer and Si3N4 anti-reflection coating. The electrons emitted from this photocathode showed a high spin polarization of 90% with a quantum efficiency as high as 0.4%. In the application for spin-polarized low energy electron microscope, a high emission current of over 1 µA was observed at 3.6 mW pump laser power. Transmission electron microscopy observation revealed that there were a small disorder and some dislocations in the GaAs/GaAsP superlattice layers. The disordered superlattice layers result in a fluctuation of the superlattice band structure and the dislocations trap the photo-electrons during the diffusion to the surface. Both of the defects influenced the performance of spin-polarized photocathode.},
 year = {2016}
}

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TY  - JOUR
T1  - Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode
AU  - Xiuguang Jin
AU  - Fumiaki Ichihashi
AU  - Atsushi Mano
AU  - Masahiko Suzuki
AU  - Tsuneo Yasue
AU  - Takanori Koshikawa
AU  - Yoshikazu Takeda
Y1  - 2016/08/08
PY  - 2016
N1  - https://doi.org/10.11648/j.ijmsa.20160504.11
DO  - 10.11648/j.ijmsa.20160504.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 178
EP  - 182
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20160504.11
AB  - We successfully developed a new transmission-type GaAs/GaAsP strained superlattice photocathode with an AlGaAs transparent inter-layer and Si3N4 anti-reflection coating. The electrons emitted from this photocathode showed a high spin polarization of 90% with a quantum efficiency as high as 0.4%. In the application for spin-polarized low energy electron microscope, a high emission current of over 1 µA was observed at 3.6 mW pump laser power. Transmission electron microscopy observation revealed that there were a small disorder and some dislocations in the GaAs/GaAsP superlattice layers. The disordered superlattice layers result in a fluctuation of the superlattice band structure and the dislocations trap the photo-electrons during the diffusion to the surface. Both of the defects influenced the performance of spin-polarized photocathode.
VL  - 5
IS  - 4
ER  -

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Author Information

Xiuguang Jin

Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan
Fumiaki Ichihashi

Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan
Atsushi Mano

Synchrotron Radiation Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan
Masahiko Suzuki

Fundamental Electronics Research Institute, Osaka Electro-Communication University, Neyagawa, Osaka, Japan
Tsuneo Yasue

Fundamental Electronics Research Institute, Osaka Electro-Communication University, Neyagawa, Osaka, Japan
Takanori Koshikawa

Fundamental Electronics Research Institute, Osaka Electro-Communication University, Neyagawa, Osaka, Japan
Yoshikazu Takeda

Aichi Synchrotron Radiation Center, Seto, Japan

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Plain Text BibTeX RIS

APA Style

Xiuguang Jin, Fumiaki Ichihashi, Atsushi Mano, Masahiko Suzuki, Tsuneo Yasue, et al. (2016). Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode. International Journal of Materials Science and Applications, 5(4), 178-182. https://doi.org/10.11648/j.ijmsa.20160504.11

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ACS Style

Xiuguang Jin; Fumiaki Ichihashi; Atsushi Mano; Masahiko Suzuki; Tsuneo Yasue, et al. Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode. Int. J. Mater. Sci. Appl. 2016, 5(4), 178-182. doi: 10.11648/j.ijmsa.20160504.11

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AMA Style

Xiuguang Jin, Fumiaki Ichihashi, Atsushi Mano, Masahiko Suzuki, Tsuneo Yasue, et al. Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode. Int J Mater Sci Appl. 2016;5(4):178-182. doi: 10.11648/j.ijmsa.20160504.11

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@article{10.11648/j.ijmsa.20160504.11,
  author = {Xiuguang Jin and Fumiaki Ichihashi and Atsushi Mano and Masahiko Suzuki and Tsuneo Yasue and Takanori Koshikawa and Yoshikazu Takeda},
  title = {Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode},
  journal = {International Journal of Materials Science and Applications},
  volume = {5},
  number = {4},
  pages = {178-182},
  doi = {10.11648/j.ijmsa.20160504.11},
  url = {https://doi.org/10.11648/j.ijmsa.20160504.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20160504.11},
  abstract = {We successfully developed a new transmission-type GaAs/GaAsP strained superlattice photocathode with an AlGaAs transparent inter-layer and Si3N4 anti-reflection coating. The electrons emitted from this photocathode showed a high spin polarization of 90% with a quantum efficiency as high as 0.4%. In the application for spin-polarized low energy electron microscope, a high emission current of over 1 µA was observed at 3.6 mW pump laser power. Transmission electron microscopy observation revealed that there were a small disorder and some dislocations in the GaAs/GaAsP superlattice layers. The disordered superlattice layers result in a fluctuation of the superlattice band structure and the dislocations trap the photo-electrons during the diffusion to the surface. Both of the defects influenced the performance of spin-polarized photocathode.},
 year = {2016}
}

Copy | Download

TY  - JOUR
T1  - Improvement of Quantum Efficiency in Transmission-Type Spin-Polarized Photocathode
AU  - Xiuguang Jin
AU  - Fumiaki Ichihashi
AU  - Atsushi Mano
AU  - Masahiko Suzuki
AU  - Tsuneo Yasue
AU  - Takanori Koshikawa
AU  - Yoshikazu Takeda
Y1  - 2016/08/08
PY  - 2016
N1  - https://doi.org/10.11648/j.ijmsa.20160504.11
DO  - 10.11648/j.ijmsa.20160504.11
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 178
EP  - 182
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20160504.11
AB  - We successfully developed a new transmission-type GaAs/GaAsP strained superlattice photocathode with an AlGaAs transparent inter-layer and Si3N4 anti-reflection coating. The electrons emitted from this photocathode showed a high spin polarization of 90% with a quantum efficiency as high as 0.4%. In the application for spin-polarized low energy electron microscope, a high emission current of over 1 µA was observed at 3.6 mW pump laser power. Transmission electron microscopy observation revealed that there were a small disorder and some dislocations in the GaAs/GaAsP superlattice layers. The disordered superlattice layers result in a fluctuation of the superlattice band structure and the dislocations trap the photo-electrons during the diffusion to the surface. Both of the defects influenced the performance of spin-polarized photocathode.
VL  - 5
IS  - 4
ER  -

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