One of the important components in many RF ICs applications is the transformer. It is very important that transformer has optimal design, that means, optimal geometry with the best possible characteristics. Because of the wide transformer applications in radio-frequency silicon-based circuits, modeling for transformers has become more and more essential. The modeling of planar transformer for very high frequencies is the subject of this paper. Square, polygonal and circular shapes of the planar windings are the important difference regarding transformer topologies. In this work, comparison was restricted to a square and an octagonal shape of the windings. In this study, we opted for calculation method developed by Wheeler to evaluate the inductance of different planar geometrical shapes of transformer windings. Besides, we determined the geometrical parameters of the transformer and from its π-electrical model; we highlighted all parasitic effects generated by stacking of different material layers. By using the S-parameters, we calculated the technological parameters. The important characteristics of a transformer are its inductances values and its parasitic capacitances and resistances, which determine its Q factor and self-resonant frequency. Furthermore, we carried out the electromagnetic simulation using COMSOL Multiphysics 4.3 software to show current density and electromagnetic field in the windings of the transformer for high frequencies.
Published in | International Journal of Industrial and Manufacturing Systems Engineering (Volume 4, Issue 6) |
DOI | 10.11648/j.ijimse.20190406.11 |
Page(s) | 54-63 |
Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
Copyright |
Copyright © The Author(s), 2019. Published by Science Publishing Group |
Integration, Transformer, Octagonal, On-chip, Planar, RF
[1] | J. Aguilera, R. Berenguer, « Design and test of integrated inductors for RF applications », Kluwer Academic Publishers, 2004. |
[2] | B. Estibals, J. L. Sanchez, C. Alonso, H. Camon et J. P. Laur, «Vers l’intégration de convertisseurs pour l’alimentation des microsystèmes», J3EA, Journal sur l’Enseignement des sciences et technologies de l’information et des systèmes, Vol 2, 2003. |
[3] | Y. Maycvskiy, « Analysis and modeling of monolithic on-chip transformers on silicon substrates », Master Thesis, Oregon State University, United States of America, 10 June 2005. |
[4] | A. S. Ezzulddin, M. H. Ali, M. S. Abdulwahab, «On-chip RF transformer performance improvement technique», Eng. & Tech. Journal, Vol. 28, No. 4, 2010. |
[5] | Z. Ouyang, Ole C. Thomsen, M. A. E. Andersen, «Optimal design and tradeoff analysis of planar transformer in high-power DC–DC converters», IEEE Transactions on Industrial Electronics, January 25, 2010. |
[6] | Xun Liu, S. Y. Ron Hui, ''Equivalent Circuit Modeling of a Multilayer Planar Winding Array Structure for Use in a Universal Contactless Battery Charging Platform'', IEEE transactions on power electronics, Vol. 22, No. 1, January 2007. |
[7] | N. M. Nguyen, R. G. Meyer, « Si IC-compatible inductors and LC passive filters», IEEE Journal of Solid-State Circuits (25) (1990) 1028–1031. |
[8] | K. B. Ashby, W. C. Finley, J. J. Bastek, S. Moinian, I. A. Koullias, «High Q inductors for wireless applications in a complementary silicon bipolar process», in: Proc. Bipolar/BiCMOS Circuits and Technology Meeting, 1994, pp. 179–182. |
[9] | C. Patrick Yue, S. Simon Wong, « Physical modeling of spiral inductors on silicon», IEEE Transactions on Electron Devices 47 (3) (2000). |
[10] | M. Yamaguchi, T. Kuribara, K.-I. Arai, «Two port type ferromagnetic RF integrated inductor», in: IEEE International Microwave Symposium, IMS-2002, TU3C-2, Seattle, USA, 2002, pp. 197–200. |
[11] | Ali Telli, Simsek Demir, Murat Askar, «Practical Performance of Planar Spiral Inductors». IEEE, 2004, pp. 487-490. |
[12] | Y. Benhadda, A. Hamid, T. Lebey, M. Derkaoui, «Design and modeling of an integrated inductor in a Buck converter DC-DC», Journal of Nano- and Electronic Physics, Vol. 7, No. 2, 10 June 2015. |
[13] | M. Derkaoui, R. Melati, A. Hamid, «Modeling of a planar inductor for converters low power», Global Conference on renewables and Energy Efficiency for Desert Regions GCREEDER’11, 2011, Jordanie. |
[14] | R. Melati, A. Hamid, T. Lebey, M. Derkaoui, «Design of a new electrical model of a ferromagnetic planar inductor for its integration in a micro-converter», Mathematical and Computer Modelling, Vol 57, pp 200–227, Janvier 2013. |
[15] | M. Derkaoui, A. Hamid, T. Lebey, R. Melati, «Design and modeling of an integrated transformer in a flyback converter», Telecommunication, Computing, Electronics and Control, TELKOMNIKA, SCOPUS Vol. 11, N° 4, pp. 669~682, December 2013. ISSN: 1693-6930. |
[16] | H-A. Wheeler & al., «Simple inductance formulas for radio coils», Proc. IRE, 16, no 10, pp. 1398-1400. |
[17] | S. Mohan & al., «Simple Accurate Expressions for Planar Spiral Inductances», IEEE Journal of Solid -State Circuits, 34, no 10 (1999), pp. 1419-1424. |
[18] | B. Estibals, A. Salles, «Design and realization of integrated inductor with low DC-resistance value for integrated power applications», HAIT Journal of Science and Engineering B, Vol. 2, Issues 5-6, pp. 848-868, 2005. |
[19] | ShwetabhVerma, Jose M. Cruz, « On-chip Inductors and Transformers », SMLI TR-99-79 December 1999. |
[20] | Y. K. Koutsoyannopoulos, «Systematic Analysis and Modeling of Integrated Inductors and Transformers in RF IC Design», Analog and Digital Signal Processing, Vol. 47, No. 8, August 2000 699. |
[21] | D. Belot, B. Leite, E. Kerherve, and J. B. Begueret, «Millimeter-wave transformer with a high transformation factor and a low insertion loss», U.S. Patent Application12/787,782, 2010. |
[22] | C. Wang, H. Liao, Y. Xiong, C. Li, R. Huang, and Y. Wang, «A physics-based equivalent-circuit model for on-chip symmetric transformers with accurate substrate modeling», IEEE Transactions on Microwave Theory and Techniques, vol. 57, no. 4, pp. 980–990, 2009. |
[23] | J. Gautier, «Modèles électriques pour la conception des circuits intégrés sur silicium», Lavoisier, 2004. |
APA Style
Mokhtaria Derkaoui. (2019). Modeling of Integrated Octagonal Planar Transformer for RF Systems. International Journal of Industrial and Manufacturing Systems Engineering, 4(6), 54-63. https://doi.org/10.11648/j.ijimse.20190406.11
ACS Style
Mokhtaria Derkaoui. Modeling of Integrated Octagonal Planar Transformer for RF Systems. Int. J. Ind. Manuf. Syst. Eng. 2019, 4(6), 54-63. doi: 10.11648/j.ijimse.20190406.11
AMA Style
Mokhtaria Derkaoui. Modeling of Integrated Octagonal Planar Transformer for RF Systems. Int J Ind Manuf Syst Eng. 2019;4(6):54-63. doi: 10.11648/j.ijimse.20190406.11
@article{10.11648/j.ijimse.20190406.11, author = {Mokhtaria Derkaoui}, title = {Modeling of Integrated Octagonal Planar Transformer for RF Systems}, journal = {International Journal of Industrial and Manufacturing Systems Engineering}, volume = {4}, number = {6}, pages = {54-63}, doi = {10.11648/j.ijimse.20190406.11}, url = {https://doi.org/10.11648/j.ijimse.20190406.11}, eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijimse.20190406.11}, abstract = {One of the important components in many RF ICs applications is the transformer. It is very important that transformer has optimal design, that means, optimal geometry with the best possible characteristics. Because of the wide transformer applications in radio-frequency silicon-based circuits, modeling for transformers has become more and more essential. The modeling of planar transformer for very high frequencies is the subject of this paper. Square, polygonal and circular shapes of the planar windings are the important difference regarding transformer topologies. In this work, comparison was restricted to a square and an octagonal shape of the windings. In this study, we opted for calculation method developed by Wheeler to evaluate the inductance of different planar geometrical shapes of transformer windings. Besides, we determined the geometrical parameters of the transformer and from its π-electrical model; we highlighted all parasitic effects generated by stacking of different material layers. By using the S-parameters, we calculated the technological parameters. The important characteristics of a transformer are its inductances values and its parasitic capacitances and resistances, which determine its Q factor and self-resonant frequency. Furthermore, we carried out the electromagnetic simulation using COMSOL Multiphysics 4.3 software to show current density and electromagnetic field in the windings of the transformer for high frequencies.}, year = {2019} }
TY - JOUR T1 - Modeling of Integrated Octagonal Planar Transformer for RF Systems AU - Mokhtaria Derkaoui Y1 - 2019/11/22 PY - 2019 N1 - https://doi.org/10.11648/j.ijimse.20190406.11 DO - 10.11648/j.ijimse.20190406.11 T2 - International Journal of Industrial and Manufacturing Systems Engineering JF - International Journal of Industrial and Manufacturing Systems Engineering JO - International Journal of Industrial and Manufacturing Systems Engineering SP - 54 EP - 63 PB - Science Publishing Group SN - 2575-3142 UR - https://doi.org/10.11648/j.ijimse.20190406.11 AB - One of the important components in many RF ICs applications is the transformer. It is very important that transformer has optimal design, that means, optimal geometry with the best possible characteristics. Because of the wide transformer applications in radio-frequency silicon-based circuits, modeling for transformers has become more and more essential. The modeling of planar transformer for very high frequencies is the subject of this paper. Square, polygonal and circular shapes of the planar windings are the important difference regarding transformer topologies. In this work, comparison was restricted to a square and an octagonal shape of the windings. In this study, we opted for calculation method developed by Wheeler to evaluate the inductance of different planar geometrical shapes of transformer windings. Besides, we determined the geometrical parameters of the transformer and from its π-electrical model; we highlighted all parasitic effects generated by stacking of different material layers. By using the S-parameters, we calculated the technological parameters. The important characteristics of a transformer are its inductances values and its parasitic capacitances and resistances, which determine its Q factor and self-resonant frequency. Furthermore, we carried out the electromagnetic simulation using COMSOL Multiphysics 4.3 software to show current density and electromagnetic field in the windings of the transformer for high frequencies. VL - 4 IS - 6 ER -