Radiation Effect on Layered Crystals of GaS and GaS &lt;Yb&gt;

R. S. Madatov; N. N. Gadzhieva; A. I. Nadjafov; N. I. Huseynov; F. G. Asadov; A. A. Abdurrahimov; D. J. Askerov

doi:doi:10.11648/j.css.20170201.16

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Radiation Effect on Layered Crystals of GaS and GaS <Yb>

R. S. Madatov, N. N. Gadzhieva, A. I. Nadjafov, N. I. Huseynov, F. G. Asadov, A. A. Abdurrahimov, D. J. Askerov

Published in Colloid and Surface Science (Volume 2, Issue 1)

Received: 29 December 2016 Accepted: 13 January 2017 Published: 13 February 2017

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Abstract

It has been conducted the analysis of IR-absorption spectra of layered single crystals of GaS and GaS <Yb>, irradiated by gamma-quanta with subsequent annealing. It has been found that, a part of impurity atoms, introduced during the growth of crystals, as well as point defects, formed by irradiation, are located in the interlayer space, that indicates the decrease in the intensity and extension of the half-width bands 188 and 184 cm^-1 in the IR spectra. During the annealing (T = 150°C, t = 150 min.) of irradiated samples there occurs an increase of intensity and a decrease of the half-width of these bands, which is caused by partial annealing of radiation defects and the transition of a part of impurity atoms from the interlayer area in the layer.

Published in	Colloid and Surface Science (Volume 2, Issue 1)
DOI	10.11648/j.css.20170201.16
Page(s)	43-46
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

IR-Absorption, Radiation, Semiconductor, Defects, Annealing

References

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APA Style

R. S. Madatov, N. N. Gadzhieva, A. I. Nadjafov, N. I. Huseynov, F. G. Asadov, et al. (2017). Radiation Effect on Layered Crystals of GaS and GaS <Yb>. Colloid and Surface Science, 2(1), 43-46. https://doi.org/10.11648/j.css.20170201.16

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ACS Style

R. S. Madatov; N. N. Gadzhieva; A. I. Nadjafov; N. I. Huseynov; F. G. Asadov, et al. Radiation Effect on Layered Crystals of GaS and GaS <Yb>. Colloid Surf. Sci. 2017, 2(1), 43-46. doi: 10.11648/j.css.20170201.16

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AMA Style

R. S. Madatov, N. N. Gadzhieva, A. I. Nadjafov, N. I. Huseynov, F. G. Asadov, et al. Radiation Effect on Layered Crystals of GaS and GaS <Yb>. Colloid Surf Sci. 2017;2(1):43-46. doi: 10.11648/j.css.20170201.16

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@article{10.11648/j.css.20170201.16,
  author = {R. S. Madatov and N. N. Gadzhieva and A. I. Nadjafov and N. I. Huseynov and F. G. Asadov and A. A. Abdurrahimov and D. J. Askerov},
  title = {Radiation Effect on Layered Crystals of GaS and GaS <Yb>},
  journal = {Colloid and Surface Science},
  volume = {2},
  number = {1},
  pages = {43-46},
  doi = {10.11648/j.css.20170201.16},
  url = {https://doi.org/10.11648/j.css.20170201.16},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.css.20170201.16},
  abstract = {It has been conducted the analysis of IR-absorption spectra of layered single crystals of GaS and GaS <Yb>, irradiated by gamma-quanta with subsequent annealing. It has been found that, a part of impurity atoms, introduced during the growth of crystals, as well as point defects, formed by irradiation, are located in the interlayer space, that indicates the decrease in the intensity and extension of the half-width bands 188 and 184 cm-1 in the IR spectra. During the annealing (T = 150°C, t = 150 min.) of irradiated samples there occurs an increase of intensity and a decrease of the half-width of these bands, which is caused by partial annealing of radiation defects and the transition of a part of impurity atoms from the interlayer area in the layer.},
 year = {2017}
}

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TY  - JOUR
T1  - Radiation Effect on Layered Crystals of GaS and GaS <Yb>
AU  - R. S. Madatov
AU  - N. N. Gadzhieva
AU  - A. I. Nadjafov
AU  - N. I. Huseynov
AU  - F. G. Asadov
AU  - A. A. Abdurrahimov
AU  - D. J. Askerov
Y1  - 2017/02/13
PY  - 2017
N1  - https://doi.org/10.11648/j.css.20170201.16
DO  - 10.11648/j.css.20170201.16
T2  - Colloid and Surface Science
JF  - Colloid and Surface Science
JO  - Colloid and Surface Science
SP  - 43
EP  - 46
PB  - Science Publishing Group
SN  - 2578-9236
UR  - https://doi.org/10.11648/j.css.20170201.16
AB  - It has been conducted the analysis of IR-absorption spectra of layered single crystals of GaS and GaS <Yb>, irradiated by gamma-quanta with subsequent annealing. It has been found that, a part of impurity atoms, introduced during the growth of crystals, as well as point defects, formed by irradiation, are located in the interlayer space, that indicates the decrease in the intensity and extension of the half-width bands 188 and 184 cm-1 in the IR spectra. During the annealing (T = 150°C, t = 150 min.) of irradiated samples there occurs an increase of intensity and a decrease of the half-width of these bands, which is caused by partial annealing of radiation defects and the transition of a part of impurity atoms from the interlayer area in the layer.
VL  - 2
IS  - 1
ER  -

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Author Information

R. S. Madatov

Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan
N. N. Gadzhieva

Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan
A. I. Nadjafov

Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan
N. I. Huseynov

Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan
F. G. Asadov

Institute of Radiation Problems of Azerbaijan NAS, Baku, Azerbaijan
A. A. Abdurrahimov

Physics Faculty of Azerbaijan Technical University, Baku, Azerbaijan
D. J. Askerov

Physics Faculty of Azerbaijan State University of Oil and Industry, Baku, Azerbaijan

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Plain Text BibTeX RIS

APA Style

R. S. Madatov, N. N. Gadzhieva, A. I. Nadjafov, N. I. Huseynov, F. G. Asadov, et al. (2017). Radiation Effect on Layered Crystals of GaS and GaS <Yb>. Colloid and Surface Science, 2(1), 43-46. https://doi.org/10.11648/j.css.20170201.16

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ACS Style

R. S. Madatov; N. N. Gadzhieva; A. I. Nadjafov; N. I. Huseynov; F. G. Asadov, et al. Radiation Effect on Layered Crystals of GaS and GaS <Yb>. Colloid Surf. Sci. 2017, 2(1), 43-46. doi: 10.11648/j.css.20170201.16

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AMA Style

R. S. Madatov, N. N. Gadzhieva, A. I. Nadjafov, N. I. Huseynov, F. G. Asadov, et al. Radiation Effect on Layered Crystals of GaS and GaS <Yb>. Colloid Surf Sci. 2017;2(1):43-46. doi: 10.11648/j.css.20170201.16

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@article{10.11648/j.css.20170201.16,
  author = {R. S. Madatov and N. N. Gadzhieva and A. I. Nadjafov and N. I. Huseynov and F. G. Asadov and A. A. Abdurrahimov and D. J. Askerov},
  title = {Radiation Effect on Layered Crystals of GaS and GaS <Yb>},
  journal = {Colloid and Surface Science},
  volume = {2},
  number = {1},
  pages = {43-46},
  doi = {10.11648/j.css.20170201.16},
  url = {https://doi.org/10.11648/j.css.20170201.16},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.css.20170201.16},
  abstract = {It has been conducted the analysis of IR-absorption spectra of layered single crystals of GaS and GaS <Yb>, irradiated by gamma-quanta with subsequent annealing. It has been found that, a part of impurity atoms, introduced during the growth of crystals, as well as point defects, formed by irradiation, are located in the interlayer space, that indicates the decrease in the intensity and extension of the half-width bands 188 and 184 cm-1 in the IR spectra. During the annealing (T = 150°C, t = 150 min.) of irradiated samples there occurs an increase of intensity and a decrease of the half-width of these bands, which is caused by partial annealing of radiation defects and the transition of a part of impurity atoms from the interlayer area in the layer.},
 year = {2017}
}

Copy | Download

TY  - JOUR
T1  - Radiation Effect on Layered Crystals of GaS and GaS <Yb>
AU  - R. S. Madatov
AU  - N. N. Gadzhieva
AU  - A. I. Nadjafov
AU  - N. I. Huseynov
AU  - F. G. Asadov
AU  - A. A. Abdurrahimov
AU  - D. J. Askerov
Y1  - 2017/02/13
PY  - 2017
N1  - https://doi.org/10.11648/j.css.20170201.16
DO  - 10.11648/j.css.20170201.16
T2  - Colloid and Surface Science
JF  - Colloid and Surface Science
JO  - Colloid and Surface Science
SP  - 43
EP  - 46
PB  - Science Publishing Group
SN  - 2578-9236
UR  - https://doi.org/10.11648/j.css.20170201.16
AB  - It has been conducted the analysis of IR-absorption spectra of layered single crystals of GaS and GaS <Yb>, irradiated by gamma-quanta with subsequent annealing. It has been found that, a part of impurity atoms, introduced during the growth of crystals, as well as point defects, formed by irradiation, are located in the interlayer space, that indicates the decrease in the intensity and extension of the half-width bands 188 and 184 cm-1 in the IR spectra. During the annealing (T = 150°C, t = 150 min.) of irradiated samples there occurs an increase of intensity and a decrease of the half-width of these bands, which is caused by partial annealing of radiation defects and the transition of a part of impurity atoms from the interlayer area in the layer.
VL  - 2
IS  - 1
ER  -

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