This study focuses on optimizing the thickness, doping, and bandgap energy of the Front Surface Field (FSF) layer in silicon heterojunction (SHJ) solar cells using predictive simulation with SILVACO-TCAD. SHJ solar cells are known for their high efficiency, low-cost manufacturing, and low-temperature fabrication processes. The FSF layer, typically composed of p+-doped hydrogenated amorphous silicon (a-Si:H), plays a pivotal role in determining cell performance. Key Methodology: The research employs the TCAD-SILVACO Atlas simulation software to model SHJ solar cells and analyze the influence of FSF layer parameters on photovoltaic performance, particularly the open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), and overall efficiency (η). The simulation integrates the Poisson and continuity equations, Boltzmann statistics, and models for Auger and Shockley-Read-Hall (SRH) recombination. Major Findings: FSF Thickness: Optimal efficiency (~23.5%) is achieved with an FSF thickness around 5 nm. Increasing the thickness beyond this value leads to reduced VOC and FF due to enhanced recombination and increased resistivity. Doping Concentration: Higher doping levels in the FSF layer strengthen the electric field at the junction, improving carrier separation and collection. However, excessive doping can cause additional recombination, emphasizing the need for balanced optimization. Bandgap Energy: A lower bandgap enhances photon absorption but increases thermal losses, while a higher bandgap limits absorption but can theoretically improve VOC. An optimal bandgap value around 1.7 eV, combined with a 5-7 nm thickness, was identified for peak efficiency. Simulation Stability: The study temporarily replaced the conventional indium tin oxide (ITO) front layer with silicon dioxide (SiO2) for simulation stability. This substitution was for numerical purposes only and is not applicable in real-world fabrication. The research highlights that achieving high-efficiency heterojunction solar cells requires precise, simultaneous optimization of the FSF layer's thickness, doping concentration, and bandgap energy. The study confirms that a careful balance of these parameters minimizes recombination losses, optimizes charge transport, and enhances photovoltaic performance. Future work should involve further experimental validation and the integration of more realistic front contact materials such as transparent conductive oxides (TCOs).
| Published in | Advances in Materials (Volume 14, Issue 3) |
| DOI | 10.11648/j.am.20251403.11 |
| Page(s) | 65-79 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2025. Published by Science Publishing Group |
Heterojunction Solar Cells, SILVACO-TCAD Simulation, Front Surface Field (FSF), Photovoltaic Efficiency, Doping Optimization, Band Gap Engineering
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APA Style
Toure, A., Toure, M., Samb, M. L., Sam, M., Sow, F., et al. (2025). Front Surface Field (FSF) Layer Thickness Engineering in Heterojunction Solar Cells: Efficiency Optimization Through Predictive SILVACO-TCAD Simulation. Advances in Materials, 14(3), 65-79. https://doi.org/10.11648/j.am.20251403.11
ACS Style
Toure, A.; Toure, M.; Samb, M. L.; Sam, M.; Sow, F., et al. Front Surface Field (FSF) Layer Thickness Engineering in Heterojunction Solar Cells: Efficiency Optimization Through Predictive SILVACO-TCAD Simulation. Adv. Mater. 2025, 14(3), 65-79. doi: 10.11648/j.am.20251403.11
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Download@article{10.11648/j.am.20251403.11,
author = {Aly Toure and Moussa Toure and Mamadou Lamine Samb and Mouhamadou Sam and Fatma Sow and Ahmed Mohamed Yahya},
title = {Front Surface Field (FSF) Layer Thickness Engineering in Heterojunction Solar Cells: Efficiency Optimization Through Predictive SILVACO-TCAD Simulation
},
journal = {Advances in Materials},
volume = {14},
number = {3},
pages = {65-79},
doi = {10.11648/j.am.20251403.11},
url = {https://doi.org/10.11648/j.am.20251403.11},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20251403.11},
abstract = {This study focuses on optimizing the thickness, doping, and bandgap energy of the Front Surface Field (FSF) layer in silicon heterojunction (SHJ) solar cells using predictive simulation with SILVACO-TCAD. SHJ solar cells are known for their high efficiency, low-cost manufacturing, and low-temperature fabrication processes. The FSF layer, typically composed of p+-doped hydrogenated amorphous silicon (a-Si:H), plays a pivotal role in determining cell performance. Key Methodology: The research employs the TCAD-SILVACO Atlas simulation software to model SHJ solar cells and analyze the influence of FSF layer parameters on photovoltaic performance, particularly the open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), and overall efficiency (η). The simulation integrates the Poisson and continuity equations, Boltzmann statistics, and models for Auger and Shockley-Read-Hall (SRH) recombination. Major Findings: FSF Thickness: Optimal efficiency (~23.5%) is achieved with an FSF thickness around 5 nm. Increasing the thickness beyond this value leads to reduced VOC and FF due to enhanced recombination and increased resistivity. Doping Concentration: Higher doping levels in the FSF layer strengthen the electric field at the junction, improving carrier separation and collection. However, excessive doping can cause additional recombination, emphasizing the need for balanced optimization. Bandgap Energy: A lower bandgap enhances photon absorption but increases thermal losses, while a higher bandgap limits absorption but can theoretically improve VOC. An optimal bandgap value around 1.7 eV, combined with a 5-7 nm thickness, was identified for peak efficiency. Simulation Stability: The study temporarily replaced the conventional indium tin oxide (ITO) front layer with silicon dioxide (SiO2) for simulation stability. This substitution was for numerical purposes only and is not applicable in real-world fabrication. The research highlights that achieving high-efficiency heterojunction solar cells requires precise, simultaneous optimization of the FSF layer's thickness, doping concentration, and bandgap energy. The study confirms that a careful balance of these parameters minimizes recombination losses, optimizes charge transport, and enhances photovoltaic performance. Future work should involve further experimental validation and the integration of more realistic front contact materials such as transparent conductive oxides (TCOs).},
year = {2025}
}
TY - JOUR T1 - Front Surface Field (FSF) Layer Thickness Engineering in Heterojunction Solar Cells: Efficiency Optimization Through Predictive SILVACO-TCAD Simulation AU - Aly Toure AU - Moussa Toure AU - Mamadou Lamine Samb AU - Mouhamadou Sam AU - Fatma Sow AU - Ahmed Mohamed Yahya Y1 - 2025/07/28 PY - 2025 N1 - https://doi.org/10.11648/j.am.20251403.11 DO - 10.11648/j.am.20251403.11 T2 - Advances in Materials JF - Advances in Materials JO - Advances in Materials SP - 65 EP - 79 PB - Science Publishing Group SN - 2327-252X UR - https://doi.org/10.11648/j.am.20251403.11 AB - This study focuses on optimizing the thickness, doping, and bandgap energy of the Front Surface Field (FSF) layer in silicon heterojunction (SHJ) solar cells using predictive simulation with SILVACO-TCAD. SHJ solar cells are known for their high efficiency, low-cost manufacturing, and low-temperature fabrication processes. The FSF layer, typically composed of p+-doped hydrogenated amorphous silicon (a-Si:H), plays a pivotal role in determining cell performance. Key Methodology: The research employs the TCAD-SILVACO Atlas simulation software to model SHJ solar cells and analyze the influence of FSF layer parameters on photovoltaic performance, particularly the open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), and overall efficiency (η). The simulation integrates the Poisson and continuity equations, Boltzmann statistics, and models for Auger and Shockley-Read-Hall (SRH) recombination. Major Findings: FSF Thickness: Optimal efficiency (~23.5%) is achieved with an FSF thickness around 5 nm. Increasing the thickness beyond this value leads to reduced VOC and FF due to enhanced recombination and increased resistivity. Doping Concentration: Higher doping levels in the FSF layer strengthen the electric field at the junction, improving carrier separation and collection. However, excessive doping can cause additional recombination, emphasizing the need for balanced optimization. Bandgap Energy: A lower bandgap enhances photon absorption but increases thermal losses, while a higher bandgap limits absorption but can theoretically improve VOC. An optimal bandgap value around 1.7 eV, combined with a 5-7 nm thickness, was identified for peak efficiency. Simulation Stability: The study temporarily replaced the conventional indium tin oxide (ITO) front layer with silicon dioxide (SiO2) for simulation stability. This substitution was for numerical purposes only and is not applicable in real-world fabrication. The research highlights that achieving high-efficiency heterojunction solar cells requires precise, simultaneous optimization of the FSF layer's thickness, doping concentration, and bandgap energy. The study confirms that a careful balance of these parameters minimizes recombination losses, optimizes charge transport, and enhances photovoltaic performance. Future work should involve further experimental validation and the integration of more realistic front contact materials such as transparent conductive oxides (TCOs). VL - 14 IS - 3 ER -
Department of Physics and Chemistry, University Iba Der Thiam of Thies, Thies, Senegal
Department of Physics and Chemistry, University Iba Der Thiam of Thies, Thies, Senegal
Department of Physics and Chemistry, University Iba Der Thiam of Thies, Thies, Senegal
Department of Physics and Chemistry, University Iba Der Thiam of Thies, Thies, Senegal
Department of Physics and Chemistry, University Iba Der Thiam of Thies, Thies, Senegal
Applied Research Unit for Renewable Energies, University of Nouakchott, Nouakchott, Mauritania
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