In this paper, mesoporous silica (NH2-SiO2) containing amino groups was firstly prepared using amino-ended hyperbranched polyamides as template agent and KH550 as surface treatment agent, and then polyimide/mesoporous NH2-SiO2 composites with low dielectric constant were successfully prepared by in situ polymerization method. The composite materiasl not only have excellent thermal properties but also have a very low dielectric constant compared to pure polyimides. The SEM results show that the surface of mesoporous NH2-SiO2 has an increased amount of wrinkles after surface treatment, and a uniform film is formed due to the excellent compatibility of mesoporous NH2-SiO2 containing amino groups with polyimides. The excellent heat resistance themselves can improve the thermal performance of the composite films. In addition, their mesoporous property increase the proportion of air (the minimum dielectric constant is 1.00056) in the composite films and reduce their dielectric performance. When the addition amount is 5 wt%, the dielectric constant of the composites at 10 MHz is 2.39, the dielectric loss is 0.02, and the glass transition temperature is 222.92°C. Therefore, the present work provides a promising solution for the preparation of PIs for the microelectronics industry with low dielectric constant and excellent thermal properties.
Published in | American Journal of Polymer Science and Technology (Volume 8, Issue 2) |
DOI | 10.11648/j.ajpst.20220802.11 |
Page(s) | 21-27 |
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
Copyright |
Copyright © The Author(s), 2022. Published by Science Publishing Group |
Polyimide, Mesoporous SiO2, Composite Films, Low Dielectric Constant
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APA Style
Zi-xiang Wang, Rong-rong Zheng, Lei Han, Shu-wu Chen, Hong-tao Wu, et al. (2022). Preparation and Properties of Polyimide/Mesoporous SiO2 Composite Films with Low Dielectric Constant. American Journal of Polymer Science and Technology, 8(2), 21-27. https://doi.org/10.11648/j.ajpst.20220802.11
ACS Style
Zi-xiang Wang; Rong-rong Zheng; Lei Han; Shu-wu Chen; Hong-tao Wu, et al. Preparation and Properties of Polyimide/Mesoporous SiO2 Composite Films with Low Dielectric Constant. Am. J. Polym. Sci. Technol. 2022, 8(2), 21-27. doi: 10.11648/j.ajpst.20220802.11
@article{10.11648/j.ajpst.20220802.11, author = {Zi-xiang Wang and Rong-rong Zheng and Lei Han and Shu-wu Chen and Hong-tao Wu and Jing-ying Wang and Xing-wei Li and Hongjing Liu and Liyan Wang}, title = {Preparation and Properties of Polyimide/Mesoporous SiO2 Composite Films with Low Dielectric Constant}, journal = {American Journal of Polymer Science and Technology}, volume = {8}, number = {2}, pages = {21-27}, doi = {10.11648/j.ajpst.20220802.11}, url = {https://doi.org/10.11648/j.ajpst.20220802.11}, eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajpst.20220802.11}, abstract = {In this paper, mesoporous silica (NH2-SiO2) containing amino groups was firstly prepared using amino-ended hyperbranched polyamides as template agent and KH550 as surface treatment agent, and then polyimide/mesoporous NH2-SiO2 composites with low dielectric constant were successfully prepared by in situ polymerization method. The composite materiasl not only have excellent thermal properties but also have a very low dielectric constant compared to pure polyimides. The SEM results show that the surface of mesoporous NH2-SiO2 has an increased amount of wrinkles after surface treatment, and a uniform film is formed due to the excellent compatibility of mesoporous NH2-SiO2 containing amino groups with polyimides. The excellent heat resistance themselves can improve the thermal performance of the composite films. In addition, their mesoporous property increase the proportion of air (the minimum dielectric constant is 1.00056) in the composite films and reduce their dielectric performance. When the addition amount is 5 wt%, the dielectric constant of the composites at 10 MHz is 2.39, the dielectric loss is 0.02, and the glass transition temperature is 222.92°C. Therefore, the present work provides a promising solution for the preparation of PIs for the microelectronics industry with low dielectric constant and excellent thermal properties.}, year = {2022} }
TY - JOUR T1 - Preparation and Properties of Polyimide/Mesoporous SiO2 Composite Films with Low Dielectric Constant AU - Zi-xiang Wang AU - Rong-rong Zheng AU - Lei Han AU - Shu-wu Chen AU - Hong-tao Wu AU - Jing-ying Wang AU - Xing-wei Li AU - Hongjing Liu AU - Liyan Wang Y1 - 2022/05/24 PY - 2022 N1 - https://doi.org/10.11648/j.ajpst.20220802.11 DO - 10.11648/j.ajpst.20220802.11 T2 - American Journal of Polymer Science and Technology JF - American Journal of Polymer Science and Technology JO - American Journal of Polymer Science and Technology SP - 21 EP - 27 PB - Science Publishing Group SN - 2575-5986 UR - https://doi.org/10.11648/j.ajpst.20220802.11 AB - In this paper, mesoporous silica (NH2-SiO2) containing amino groups was firstly prepared using amino-ended hyperbranched polyamides as template agent and KH550 as surface treatment agent, and then polyimide/mesoporous NH2-SiO2 composites with low dielectric constant were successfully prepared by in situ polymerization method. The composite materiasl not only have excellent thermal properties but also have a very low dielectric constant compared to pure polyimides. The SEM results show that the surface of mesoporous NH2-SiO2 has an increased amount of wrinkles after surface treatment, and a uniform film is formed due to the excellent compatibility of mesoporous NH2-SiO2 containing amino groups with polyimides. The excellent heat resistance themselves can improve the thermal performance of the composite films. In addition, their mesoporous property increase the proportion of air (the minimum dielectric constant is 1.00056) in the composite films and reduce their dielectric performance. When the addition amount is 5 wt%, the dielectric constant of the composites at 10 MHz is 2.39, the dielectric loss is 0.02, and the glass transition temperature is 222.92°C. Therefore, the present work provides a promising solution for the preparation of PIs for the microelectronics industry with low dielectric constant and excellent thermal properties. VL - 8 IS - 2 ER -