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Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit

Received: 2 May 2021     Accepted: 20 May 2021     Published: 4 September 2021
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Abstract

Advanced technology nodes with small feature sizes and increased design complexity make it increasingly time-consuming to determine the root cause of yield loss. Several of the defects also occur inside a circuit making physical failure analysis (PFA) and electrical failure analysis (EFA) much more challenging. EFA has been instrumental in driving product yield and reliability for consumer products such as mobile phones and computer chips. It involves the use of state-of-the-art tools and techniques. One of the main changes EFA analyses is an enhancement of dynamic EFA in circuit failed in functional test. We propose a technique for advanced Electrical Failure Analysis (EFA) tool with a Superconducting Nanowire Single Photon Detector (SnSPD) system and its application to low voltage Time-Resolved Emission (TRE) measurements (also known as Picosecond Imaging Circuit Analysis, PICA) of scaled VLSI circuits with enhanced sensitivity for discussing Time Resolved Emission (TRE). In order to understand the figures of advantage that a single-photon detector should have to enable the acquisition of time resolved emission waveforms for low voltage applications. We will provide that measurements down to a low 1 V supply voltage were made possible by a careful optimization of the detector front-end electronics. We also characterized the emission from devices with different threshold voltages in order to understand how the emission contributions depend on this parameter and how this affects the resulting waveform. we hope to be able to show soon even better results that should allow continued application of the non-invasive TRE and PICA technology towards future scaled nodes with smaller gates and lower supply voltages.

Published in American Journal of Electrical and Computer Engineering (Volume 5, Issue 2)
DOI 10.11648/j.ajece.20210502.14
Page(s) 72-76
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2021. Published by Science Publishing Group

Keywords

PICA, TRE, Functional, EFA

References
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[2] P. Song et al., “Timing Analysis of a Microprocessor PLL using High Quantum Efficiency Superconducting Single Photon Detector (SSPD)”, ISTFA, 2004, pp. 197-202.
[3] E. B. Varner et al., “Single Element Time Resolved Emission Probing for Practical Microprocessor Diagnostic Applications”, ISTFA, 2002, pp. 741-746.
[4] D. Bodoh et al., “Defect Localization Using Time-Resolved Photon Emission on SOI Devices That Fail Scan Tests”, ISTFA, 2002, pp. 655-661.
[5] J. S. Vickers et al., “Time-Resolved Photon Counting System Based on a Geiger-Mode InGaAs/InP APD and a Solid Immersion Lens”, LEOS, 2003, pp. 600-601.
[6] G. L. Woods and S. Kasapi, “Spectrally- and temporally-resolved dynamic emission from CMOS ICs”, LEOS, 2003, pp. 598-599.
[7] R. R. Goruganthu et al., “Spray Cooling for Time Resolved Emission Measurements of ICs”, ISTFA, 2004, pp. 18-23.
[8] P. Ouimet et al., “Analysis of 0.13um CMOS Technology Using Time Resolved Light Emission”, ISTFA, 2004, pp. 203-209.
[9] H. L. Marks et al., “PC Card Based Optical Probing of Advanced Graphics Processor Using Time Resolved Emission”, ISTFA, 2004, pp. 36-39. resolved dynamic emission from CMOS ICs”, LEOS, 2003, pp. 598-599.
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[19] Measurement using Time-Resolved Emission”, ISTFA, 2006, pp. 438-443.
[20] F. Stellari et al., “On-chip power supply noise measurement using Time Resolved Emission (TRE) waveforms of Light Emission from Off-State Leakage Current (LEOSLC)”, ITC, 2009, paper 8.1, pp. 1-10.
[21] F. Stellari et al., “Switching time extraction of CMOS gates using time-resolved emission (TRE)”, IRPS, 2006, pp. 566-573.
[22] S. Polonsky and K. A. Jenkins, “Time-resolved measurements of self-heating in SOI and strained-silicon MOSFETs using photon emission microscopy”, IEEE Electron Dev. Lett., vol. 25, no. 4, 2004, pp. 208-210.
[23] S. Thompson et al., “A 90 nm Logic Technology Featuring 50nm Strained Silicon Channel Transistors, 7 Layers of Cu Interconnects, Low k ILD, and 1um² SRAM Cell”, IEDM, 2002, pp. 61-64.
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Cite This Article
  • APA Style

    Shang Chih Lin, Frank Yong. (2021). Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit. American Journal of Electrical and Computer Engineering, 5(2), 72-76. https://doi.org/10.11648/j.ajece.20210502.14

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    ACS Style

    Shang Chih Lin; Frank Yong. Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit. Am. J. Electr. Comput. Eng. 2021, 5(2), 72-76. doi: 10.11648/j.ajece.20210502.14

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    AMA Style

    Shang Chih Lin, Frank Yong. Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit. Am J Electr Comput Eng. 2021;5(2):72-76. doi: 10.11648/j.ajece.20210502.14

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  • @article{10.11648/j.ajece.20210502.14,
      author = {Shang Chih Lin and Frank Yong},
      title = {Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit},
      journal = {American Journal of Electrical and Computer Engineering},
      volume = {5},
      number = {2},
      pages = {72-76},
      doi = {10.11648/j.ajece.20210502.14},
      url = {https://doi.org/10.11648/j.ajece.20210502.14},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajece.20210502.14},
      abstract = {Advanced technology nodes with small feature sizes and increased design complexity make it increasingly time-consuming to determine the root cause of yield loss. Several of the defects also occur inside a circuit making physical failure analysis (PFA) and electrical failure analysis (EFA) much more challenging. EFA has been instrumental in driving product yield and reliability for consumer products such as mobile phones and computer chips. It involves the use of state-of-the-art tools and techniques. One of the main changes EFA analyses is an enhancement of dynamic EFA in circuit failed in functional test. We propose a technique for advanced Electrical Failure Analysis (EFA) tool with a Superconducting Nanowire Single Photon Detector (SnSPD) system and its application to low voltage Time-Resolved Emission (TRE) measurements (also known as Picosecond Imaging Circuit Analysis, PICA) of scaled VLSI circuits with enhanced sensitivity for discussing Time Resolved Emission (TRE). In order to understand the figures of advantage that a single-photon detector should have to enable the acquisition of time resolved emission waveforms for low voltage applications. We will provide that measurements down to a low 1 V supply voltage were made possible by a careful optimization of the detector front-end electronics. We also characterized the emission from devices with different threshold voltages in order to understand how the emission contributions depend on this parameter and how this affects the resulting waveform. we hope to be able to show soon even better results that should allow continued application of the non-invasive TRE and PICA technology towards future scaled nodes with smaller gates and lower supply voltages.},
     year = {2021}
    }
    

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  • TY  - JOUR
    T1  - Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuit
    AU  - Shang Chih Lin
    AU  - Frank Yong
    Y1  - 2021/09/04
    PY  - 2021
    N1  - https://doi.org/10.11648/j.ajece.20210502.14
    DO  - 10.11648/j.ajece.20210502.14
    T2  - American Journal of Electrical and Computer Engineering
    JF  - American Journal of Electrical and Computer Engineering
    JO  - American Journal of Electrical and Computer Engineering
    SP  - 72
    EP  - 76
    PB  - Science Publishing Group
    SN  - 2640-0502
    UR  - https://doi.org/10.11648/j.ajece.20210502.14
    AB  - Advanced technology nodes with small feature sizes and increased design complexity make it increasingly time-consuming to determine the root cause of yield loss. Several of the defects also occur inside a circuit making physical failure analysis (PFA) and electrical failure analysis (EFA) much more challenging. EFA has been instrumental in driving product yield and reliability for consumer products such as mobile phones and computer chips. It involves the use of state-of-the-art tools and techniques. One of the main changes EFA analyses is an enhancement of dynamic EFA in circuit failed in functional test. We propose a technique for advanced Electrical Failure Analysis (EFA) tool with a Superconducting Nanowire Single Photon Detector (SnSPD) system and its application to low voltage Time-Resolved Emission (TRE) measurements (also known as Picosecond Imaging Circuit Analysis, PICA) of scaled VLSI circuits with enhanced sensitivity for discussing Time Resolved Emission (TRE). In order to understand the figures of advantage that a single-photon detector should have to enable the acquisition of time resolved emission waveforms for low voltage applications. We will provide that measurements down to a low 1 V supply voltage were made possible by a careful optimization of the detector front-end electronics. We also characterized the emission from devices with different threshold voltages in order to understand how the emission contributions depend on this parameter and how this affects the resulting waveform. we hope to be able to show soon even better results that should allow continued application of the non-invasive TRE and PICA technology towards future scaled nodes with smaller gates and lower supply voltages.
    VL  - 5
    IS  - 2
    ER  - 

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Author Information
  • Gallant Precision Machining Co., Ltd, Hsin Chu, Taiwan

  • Gallant Precision Machining Co., Ltd, Hsin Chu, Taiwan

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